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K1165-VB Product details
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K1165-VB MOSFET Product Introduction
**K1165-VB** is a high-performance N-type MOSFET in TO3P package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) reaches 600V, which makes it perform well in high-voltage circuits and is suitable for power management and switch control. The threshold voltage (Vth) of this MOSFET is 3.5V, and it can turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of K1165-VB is 380mΩ at VGS=10V, providing good conductivity and low power consumption. The use of SJ_Multi-EPI technology gives it better performance and stability in high temperature and high frequency applications.
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**K1165-VB** is a high-performance N-type MOSFET in TO3P package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) reaches 600V, which makes it perform well in high-voltage circuits and is suitable for power management and switch control. The threshold voltage (Vth) of this MOSFET is 3.5V, and it can turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of K1165-VB is 380mΩ at VGS=10V, providing good conductivity and low power consumption. The use of SJ_Multi-EPI technology gives it better performance and stability in high temperature and high frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
1. **Package**: TO3P
- The TO3P package design provides good heat dissipation, suitable for high power applications and can withstand higher temperatures.
2. **Configuration**: Single N-type channel
- The single channel configuration improves the current conduction efficiency and is suitable for a variety of electrical applications.
3. **Drain-source voltage (VDS)**: 600V
- The maximum drain-source voltage is 600V, making it suitable for high voltage circuits and capable of handling voltages up to 600V.
4. **Gate-source voltage (VGS)**: ±30V
- The high gate-source voltage is limited to ±30V, ensuring the safety of the device under different operating conditions.
5. **Threshold Voltage (Vth)**: 3.5V
- The lower threshold voltage enables the MOSFET to turn on quickly at a lower gate voltage, suitable for fast switching applications.
6. **On-resistance (RDS(ON))**:
- 380mΩ @ VGS = 10V
- The relatively low on-resistance makes this MOSFET perform well when turned on, reducing power consumption.
7. **Current Rating (ID)**: 11A
- The maximum continuous current is 11A, suitable for a variety of medium current applications, ensuring the stability and safety of the device.
8. **Technology**: SJ_Multi-EPI
- Adopts SJ_Multi-EPI technology to provide better performance, especially in applications under high temperature and high frequency conditions.
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1. **Package**: TO3P
- The TO3P package design provides good heat dissipation, suitable for high power applications and can withstand higher temperatures.
2. **Configuration**: Single N-type channel
- The single channel configuration improves the current conduction efficiency and is suitable for a variety of electrical applications.
3. **Drain-source voltage (VDS)**: 600V
- The maximum drain-source voltage is 600V, making it suitable for high voltage circuits and capable of handling voltages up to 600V.
4. **Gate-source voltage (VGS)**: ±30V
- The high gate-source voltage is limited to ±30V, ensuring the safety of the device under different operating conditions.
5. **Threshold Voltage (Vth)**: 3.5V
- The lower threshold voltage enables the MOSFET to turn on quickly at a lower gate voltage, suitable for fast switching applications.
6. **On-resistance (RDS(ON))**:
- 380mΩ @ VGS = 10V
- The relatively low on-resistance makes this MOSFET perform well when turned on, reducing power consumption.
7. **Current Rating (ID)**: 11A
- The maximum continuous current is 11A, suitable for a variety of medium current applications, ensuring the stability and safety of the device.
8. **Technology**: SJ_Multi-EPI
- Adopts SJ_Multi-EPI technology to provide better performance, especially in applications under high temperature and high frequency conditions.
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Domain and module applications：
Application Examples
1. **High-voltage power management**:
K1165-VB is widely used in high-voltage switching power supplies (SMPS), which can provide stable power solutions for various electronic devices, and is suitable for power adapters and industrial equipment.
2. **Inverter**:
This MOSFET can be used in inverters, especially in solar power generation and wind power generation systems, to convert DC power to AC power to improve energy utilization.
3. **Motor control**:
K1165-VB can be used in motor drive control, providing efficient current management and control, suitable for power tools and small motor drive systems.
4. **Lighting control**:
In LED lighting and other lighting control applications, K1165-VB can achieve efficient switch control, suitable for the design of intelligent lighting systems.
5. **Overvoltage and overcurrent protection**:
This MOSFET can provide effective overvoltage and overcurrent protection in the power protection circuit to ensure the safety of other electronic components and is often used in power protection devices.
In summary, K1165-VB is an N-type MOSFET with superior performance and wide application range. It can meet the needs of a variety of high voltage and medium current applications, and provide guarantee for the efficient and safe operation of equipment.
1. **High-voltage power management**:
K1165-VB is widely used in high-voltage switching power supplies (SMPS), which can provide stable power solutions for various electronic devices, and is suitable for power adapters and industrial equipment.
2. **Inverter**:
This MOSFET can be used in inverters, especially in solar power generation and wind power generation systems, to convert DC power to AC power to improve energy utilization.
3. **Motor control**:
K1165-VB can be used in motor drive control, providing efficient current management and control, suitable for power tools and small motor drive systems.
4. **Lighting control**:
In LED lighting and other lighting control applications, K1165-VB can achieve efficient switch control, suitable for the design of intelligent lighting systems.
5. **Overvoltage and overcurrent protection**:
This MOSFET can provide effective overvoltage and overcurrent protection in the power protection circuit to ensure the safety of other electronic components and is often used in power protection devices.
In summary, K1165-VB is an N-type MOSFET with superior performance and wide application range. It can meet the needs of a variety of high voltage and medium current applications, and provide guarantee for the efficient and safe operation of equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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