中文
English
K1151L-VB Product details
Back to previous pageProduct introduction：
K1151L-VB MOSFET Product Introduction
**K1151L-VB** is a high-performance N-type MOSFET in TO251 package, designed for high voltage and low current applications. Its maximum drain-source voltage (VDS) reaches 650V, suitable for a variety of power management and control circuits. The threshold voltage (Vth) is 3.5V, enabling it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of K1151L-VB is 4300mΩ at VGS=10V. Although its power consumption is relatively high, it can still provide stable and reliable performance in low current applications. This MOSFET adopts Plannar technology and has good stability and controllability, making it suitable for high-voltage switching and protection circuits.
---
**K1151L-VB** is a high-performance N-type MOSFET in TO251 package, designed for high voltage and low current applications. Its maximum drain-source voltage (VDS) reaches 650V, suitable for a variety of power management and control circuits. The threshold voltage (Vth) is 3.5V, enabling it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of K1151L-VB is 4300mΩ at VGS=10V. Although its power consumption is relatively high, it can still provide stable and reliable performance in low current applications. This MOSFET adopts Plannar technology and has good stability and controllability, making it suitable for high-voltage switching and protection circuits.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO251
- TO251 package design ensures good heat dissipation performance and is suitable for circuits with relatively high current and voltage requirements.
2. **Configuration**: Single N-type channel
- Single channel configuration improves the current conduction efficiency and is suitable for a variety of electrical applications.
3. **Drain-source voltage (VDS)**: 650V
- Suitable for high voltage applications, can withstand voltages up to 650V, and is suitable for a variety of high voltage circuits.
4. **Gate-source voltage (VGS)**: ±30V
- Ensures safety under different working conditions and is suitable for a wide range of power supply control.
5. **Threshold voltage (Vth)**: 3.5V
- Achieve fast turn-on at a lower gate voltage, suitable for fast switching applications.
6. **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS = 10V
- Higher on-resistance may result in increased power consumption, but it can still be effective in specific applications.
7. **Current rating (ID)**: 2A
- Maximum continuous current is suitable for a variety of low current applications, ensuring the safety and stability of the device.
8. **Technology**: Plannar
- Plannar technology is used to ensure the stability and reliability of the device in high current and high voltage environments.
---
1. **Package**: TO251
- TO251 package design ensures good heat dissipation performance and is suitable for circuits with relatively high current and voltage requirements.
2. **Configuration**: Single N-type channel
- Single channel configuration improves the current conduction efficiency and is suitable for a variety of electrical applications.
3. **Drain-source voltage (VDS)**: 650V
- Suitable for high voltage applications, can withstand voltages up to 650V, and is suitable for a variety of high voltage circuits.
4. **Gate-source voltage (VGS)**: ±30V
- Ensures safety under different working conditions and is suitable for a wide range of power supply control.
5. **Threshold voltage (Vth)**: 3.5V
- Achieve fast turn-on at a lower gate voltage, suitable for fast switching applications.
6. **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS = 10V
- Higher on-resistance may result in increased power consumption, but it can still be effective in specific applications.
7. **Current rating (ID)**: 2A
- Maximum continuous current is suitable for a variety of low current applications, ensuring the safety and stability of the device.
8. **Technology**: Plannar
- Plannar technology is used to ensure the stability and reliability of the device in high current and high voltage environments.
---
Domain and module applications：
Application Examples
1. **High-voltage switching power supply**:
K1151L-VB can be widely used in high-voltage switching power supplies (SMPS) to provide reliable power solutions for various devices, suitable for power adapters and industrial control equipment.
2. **Motor drive control**:
In low-power motor drive systems, K1151L-VB can effectively control the start and stop of the motor, suitable for small power tools and household appliances.
3. **Power management circuit**:
This MOSFET plays an important role in the power management circuit, enabling efficient power conversion and management, suitable for portable devices and chargers.
4. **Overvoltage protection circuit**:
K1151L-VB is suitable for overvoltage protection circuits, which can ensure the safety of other electronic components under high voltage conditions, and is often used in power protection and safety devices.
In summary, K1151L-VB is a highly stable and adaptable N-type MOSFET that can meet the needs of a variety of high-voltage and low-current applications, ensuring efficient and safe operation of the equipment.
1. **High-voltage switching power supply**:
K1151L-VB can be widely used in high-voltage switching power supplies (SMPS) to provide reliable power solutions for various devices, suitable for power adapters and industrial control equipment.
2. **Motor drive control**:
In low-power motor drive systems, K1151L-VB can effectively control the start and stop of the motor, suitable for small power tools and household appliances.
3. **Power management circuit**:
This MOSFET plays an important role in the power management circuit, enabling efficient power conversion and management, suitable for portable devices and chargers.
4. **Overvoltage protection circuit**:
K1151L-VB is suitable for overvoltage protection circuits, which can ensure the safety of other electronic components under high voltage conditions, and is often used in power protection and safety devices.
In summary, K1151L-VB is a highly stable and adaptable N-type MOSFET that can meet the needs of a variety of high-voltage and low-current applications, ensuring efficient and safe operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
