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K1118-VB Product details
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K1118-VB Product Introduction
K1118-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-voltage switching and power management applications. Its maximum drain-source voltage (VDS) is up to 650V, suitable for use in high-voltage power converters and industrial equipment. The threshold voltage (Vth) of this MOSFET is 3.5V, and it can turn on quickly at a lower gate-source voltage, improving switching speed and system efficiency. The on-resistance (RDS(ON)) of K1118-VB is 1100mΩ at VGS of 10V, and it supports a drain current (ID) of up to 7A, making it excellent in high-power applications and particularly suitable for circuit designs that require high performance and reliability.
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K1118-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-voltage switching and power management applications. Its maximum drain-source voltage (VDS) is up to 650V, suitable for use in high-voltage power converters and industrial equipment. The threshold voltage (Vth) of this MOSFET is 3.5V, and it can turn on quickly at a lower gate-source voltage, improving switching speed and system efficiency. The on-resistance (RDS(ON)) of K1118-VB is 1100mΩ at VGS of 10V, and it supports a drain current (ID) of up to 7A, making it excellent in high-power applications and particularly suitable for circuit designs that require high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: K1118-VB
- **Package**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: Plannar
- **Maximum power dissipation (PD)**: 50W
- **Thermal resistance (RθJC)**: 2°C/W
- **Operating temperature range**: -55°C to 150°C
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- **Model**: K1118-VB
- **Package**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: Plannar
- **Maximum power dissipation (PD)**: 50W
- **Thermal resistance (RθJC)**: 2°C/W
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications：
Application fields and module description
1. **Power converter**: K1118-VB is widely used in switching power supplies (SMPS) and DC-DC converters. Its high voltage and high current capabilities ensure the stability and high efficiency of the system under high loads. It is particularly suitable for computer power supplies and industrial power modules.
2. **Motor drive**: This MOSFET can be used in motor control circuits, especially in power tools, household appliances and electric vehicles, to help achieve efficient power conversion and good control characteristics and improve overall performance.
3. **Inverter application**: K1118-VB is suitable for solar inverters and other renewable energy systems. It can efficiently convert DC power to AC power, support high voltage and high power power conversion, and improve the utilization efficiency of renewable energy.
4. **High-frequency switching circuit**: Due to its low on-resistance and good switching characteristics, K1118-VB is suitable for high-frequency switching circuits and is widely used in communication equipment and computer systems to help improve overall energy efficiency and response speed.
5. **LED drive circuit**: This MOSFET can be used for high-power LED driving, providing stable current output to ensure the brightness and consistency of LED lighting, and is suitable for use in commercial and industrial lighting solutions.
1. **Power converter**: K1118-VB is widely used in switching power supplies (SMPS) and DC-DC converters. Its high voltage and high current capabilities ensure the stability and high efficiency of the system under high loads. It is particularly suitable for computer power supplies and industrial power modules.
2. **Motor drive**: This MOSFET can be used in motor control circuits, especially in power tools, household appliances and electric vehicles, to help achieve efficient power conversion and good control characteristics and improve overall performance.
3. **Inverter application**: K1118-VB is suitable for solar inverters and other renewable energy systems. It can efficiently convert DC power to AC power, support high voltage and high power power conversion, and improve the utilization efficiency of renewable energy.
4. **High-frequency switching circuit**: Due to its low on-resistance and good switching characteristics, K1118-VB is suitable for high-frequency switching circuits and is widely used in communication equipment and computer systems to help improve overall energy efficiency and response speed.
5. **LED drive circuit**: This MOSFET can be used for high-power LED driving, providing stable current output to ensure the brightness and consistency of LED lighting, and is suitable for use in commercial and industrial lighting solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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