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K1112-VB Product details
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Product Introduction
**K1112-VB** is a high-performance N-channel MOSFET designed in TO252 package, developed for low to medium voltage applications. Its maximum drain-source voltage (VDS) can reach 60V, and the maximum gate-source voltage (VGS) is ±20V, making it suitable for a variety of power management and switching applications. The threshold voltage (Vth) of this model is 1.7V, which can quickly turn on at a lower gate voltage, improving the system response speed. The on-resistance RDS(ON) of K1112-VB is 85mΩ at VGS = 4.5V, and it is reduced to 73mΩ at VGS = 10V, which significantly improves energy efficiency and reduces heat loss. These features make K1112-VB an ideal choice for many fields such as power conversion, drive and automotive electronics.
**K1112-VB** is a high-performance N-channel MOSFET designed in TO252 package, developed for low to medium voltage applications. Its maximum drain-source voltage (VDS) can reach 60V, and the maximum gate-source voltage (VGS) is ±20V, making it suitable for a variety of power management and switching applications. The threshold voltage (Vth) of this model is 1.7V, which can quickly turn on at a lower gate voltage, improving the system response speed. The on-resistance RDS(ON) of K1112-VB is 85mΩ at VGS = 4.5V, and it is reduced to 73mΩ at VGS = 10V, which significantly improves energy efficiency and reduces heat loss. These features make K1112-VB an ideal choice for many fields such as power conversion, drive and automotive electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: K1112-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 85mΩ (at VGS = 4.5V)
- 73mΩ (at VGS = 10V)
- **ID (drain current)**: 18A
- **Technology**: Trench technology
- **Model**: K1112-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 85mΩ (at VGS = 4.5V)
- 73mΩ (at VGS = 10V)
- **ID (drain current)**: 18A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Switching Power Supply**: K1112-VB is suitable for switching power supply (SMPS) design. Its low on-resistance and high efficiency can significantly improve power conversion efficiency and is widely used in consumer electronics such as laptops and mobile phone chargers.
2. **LED Driver**: Due to its high leakage current capability of up to 18A, K1112-VB can be used as a switching element in LED drivers to ensure efficient energy transmission and meet the needs of high-brightness lighting systems.
3. **Power Tools**: This MOSFET can be used in the motor control circuit of power tools, providing fast response and high efficiency, which helps to improve the performance and work efficiency of the tools.
4. **Power Management IC**: K1112-VB can be used in various power management integrated circuits to support battery charging and power distribution applications, ensuring efficient use of power, suitable for smartphones and other portable devices.
5. **Automotive electronics**: In the field of automotive electronics, this type of MOSFET can be used in electric power steering systems and power management applications. With its high efficiency and reliability, it meets the high requirements of modern automobiles for electronic control.
In short, K1112-VB is a versatile, high-efficiency N-channel MOSFET suitable for a variety of power management and drive applications, providing an excellent solution for modern electronic design.
1. **Switching Power Supply**: K1112-VB is suitable for switching power supply (SMPS) design. Its low on-resistance and high efficiency can significantly improve power conversion efficiency and is widely used in consumer electronics such as laptops and mobile phone chargers.
2. **LED Driver**: Due to its high leakage current capability of up to 18A, K1112-VB can be used as a switching element in LED drivers to ensure efficient energy transmission and meet the needs of high-brightness lighting systems.
3. **Power Tools**: This MOSFET can be used in the motor control circuit of power tools, providing fast response and high efficiency, which helps to improve the performance and work efficiency of the tools.
4. **Power Management IC**: K1112-VB can be used in various power management integrated circuits to support battery charging and power distribution applications, ensuring efficient use of power, suitable for smartphones and other portable devices.
5. **Automotive electronics**: In the field of automotive electronics, this type of MOSFET can be used in electric power steering systems and power management applications. With its high efficiency and reliability, it meets the high requirements of modern automobiles for electronic control.
In short, K1112-VB is a versatile, high-efficiency N-channel MOSFET suitable for a variety of power management and drive applications, providing an excellent solution for modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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