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K10P60W-VB Product details
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K10P60W-VB MOSFET Product Introduction
**K10P60W-VB** is a high-performance N-type MOSFET in TO252 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) reaches 650V, and the maximum gate-source voltage (VGS) is ±30V, which is suitable for a variety of power management and control circuits. The threshold voltage (Vth) is 3.5V, which enables it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of K10P60W-VB is 370mΩ at VGS=10V, ensuring low power consumption and low heat generation, which can meet the needs of high-performance applications. This MOSFET adopts SJ_Multi-EPI technology, providing excellent performance and stability, and is suitable for switching power supplies, motor drives and various high-voltage control systems.
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**K10P60W-VB** is a high-performance N-type MOSFET in TO252 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) reaches 650V, and the maximum gate-source voltage (VGS) is ±30V, which is suitable for a variety of power management and control circuits. The threshold voltage (Vth) is 3.5V, which enables it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of K10P60W-VB is 370mΩ at VGS=10V, ensuring low power consumption and low heat generation, which can meet the needs of high-performance applications. This MOSFET adopts SJ_Multi-EPI technology, providing excellent performance and stability, and is suitable for switching power supplies, motor drives and various high-voltage control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
- TO252 package design provides good heat dissipation characteristics, suitable for high power and high current applications, while ensuring that the device occupies the smallest space in the circuit.
2. **Configuration**: Single N-type channel
- Single channel design provides efficient current conduction performance and optimizes circuit working efficiency.
3. **Drain-source voltage (VDS)**: 650V
- Suitable for high voltage circuits, can withstand voltages up to 650V, suitable for a variety of application scenarios.
4. **Gate-source voltage (VGS)**: ±30V
- Ensures the safety of the device under different working conditions, suitable for a wide range of power control.
5. **Threshold voltage (Vth)**: 3.5V
- Ensures rapid turn-on at a lower gate voltage, suitable for fast switching applications.
6. **On-resistance (RDS(ON))**:
- 370mΩ @ VGS = 10V
- Lower on-resistance reduces power consumption and improves energy efficiency, suitable for high-efficiency circuit design.
7. **Current rating (ID)**: 11A
- Maximum continuous current under normal operating conditions, suitable for a variety of high current applications.
8. **Technology**: SJ_Multi-EPI
- Using SJ_Multi-EPI technology to ensure the stability and efficiency of the device under high current and high voltage environments.
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1. **Package**: TO252
- TO252 package design provides good heat dissipation characteristics, suitable for high power and high current applications, while ensuring that the device occupies the smallest space in the circuit.
2. **Configuration**: Single N-type channel
- Single channel design provides efficient current conduction performance and optimizes circuit working efficiency.
3. **Drain-source voltage (VDS)**: 650V
- Suitable for high voltage circuits, can withstand voltages up to 650V, suitable for a variety of application scenarios.
4. **Gate-source voltage (VGS)**: ±30V
- Ensures the safety of the device under different working conditions, suitable for a wide range of power control.
5. **Threshold voltage (Vth)**: 3.5V
- Ensures rapid turn-on at a lower gate voltage, suitable for fast switching applications.
6. **On-resistance (RDS(ON))**:
- 370mΩ @ VGS = 10V
- Lower on-resistance reduces power consumption and improves energy efficiency, suitable for high-efficiency circuit design.
7. **Current rating (ID)**: 11A
- Maximum continuous current under normal operating conditions, suitable for a variety of high current applications.
8. **Technology**: SJ_Multi-EPI
- Using SJ_Multi-EPI technology to ensure the stability and efficiency of the device under high current and high voltage environments.
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Domain and module applications：
Application Examples
1. **Switching Power Supply**:
K10P60W-VB can be widely used in switching power supplies (SMPS), providing stable and efficient power solutions for various electronic devices, suitable for power adapters, computer power supplies, etc.
2. **Motor Control**:
In the motor drive system, K10P60W-VB can effectively control the start and stop and speed of the motor, suitable for power tools, household appliances and industrial automation equipment.
3. **Battery Management System**:
This MOSFET plays a key role in the battery management system, suitable for battery charge and discharge control, improving battery safety and efficiency, and widely used in electric vehicles and energy storage systems.
4. **High Voltage Control Circuit**:
K10P60W-VB is suitable for various high voltage control circuits, and can effectively manage the power supply of high voltage devices, such as high voltage switches and relays.
In summary, K10P60W-VB is an N-type MOSFET with superior electrical characteristics and high reliability. It is widely used in the high voltage and high current requirements of modern electronic devices to ensure efficient and safe operation of the equipment.
1. **Switching Power Supply**:
K10P60W-VB can be widely used in switching power supplies (SMPS), providing stable and efficient power solutions for various electronic devices, suitable for power adapters, computer power supplies, etc.
2. **Motor Control**:
In the motor drive system, K10P60W-VB can effectively control the start and stop and speed of the motor, suitable for power tools, household appliances and industrial automation equipment.
3. **Battery Management System**:
This MOSFET plays a key role in the battery management system, suitable for battery charge and discharge control, improving battery safety and efficiency, and widely used in electric vehicles and energy storage systems.
4. **High Voltage Control Circuit**:
K10P60W-VB is suitable for various high voltage control circuits, and can effectively manage the power supply of high voltage devices, such as high voltage switches and relays.
In summary, K10P60W-VB is an N-type MOSFET with superior electrical characteristics and high reliability. It is widely used in the high voltage and high current requirements of modern electronic devices to ensure efficient and safe operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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