中文
English
K10N90-VB Product details
Back to previous pageProduct introduction：
Product Introduction
K10N90-VB is a high voltage N-channel MOSFET in TO247 package with excellent electrical performance, especially suitable for high voltage applications. Its maximum drain-source voltage (VDS) is 900V, which can withstand higher voltages and cope with harsh working environments. The device has a gate-source voltage (VGS) range of ±30V and a threshold voltage (Vth) of 3.5V, ensuring fast turn-on at low voltage and good switching characteristics. The on-resistance (RDS(ON)) of K10N90-VB is 750mΩ (at VGS=10V), and supports a leakage current (ID) of up to 9A, which is widely used in power management, motor control and other fields.
K10N90-VB is a high voltage N-channel MOSFET in TO247 package with excellent electrical performance, especially suitable for high voltage applications. Its maximum drain-source voltage (VDS) is 900V, which can withstand higher voltages and cope with harsh working environments. The device has a gate-source voltage (VGS) range of ±30V and a threshold voltage (Vth) of 3.5V, ensuring fast turn-on at low voltage and good switching characteristics. The on-resistance (RDS(ON)) of K10N90-VB is 750mΩ (at VGS=10V), and supports a leakage current (ID) of up to 9A, which is widely used in power management, motor control and other fields.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Product model**: K10N90-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI
- **Product model**: K10N90-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
K10N90-VB MOSFET is widely used in many fields, including but not limited to:
1. **Switching power supply**: Due to its high withstand voltage and low on-resistance characteristics, K10N90-VB is suitable for AC-DC converters and DC-DC converters, which can effectively improve power efficiency.
2. **Motor control**: In industrial motor drives and electric vehicles, K10N90-VB can be used as an efficient switching element to provide fast response and stable power transfer.
3. **Inverter**: Used in photovoltaic inverters and UPS systems, its high voltage capability can ensure stable operation under various working conditions.
4. **High frequency application**: K10N90-VB can operate under high frequency switching conditions and is suitable for use in radio transmission and reception equipment to ensure efficient signal transmission.
With these features and application scenarios, K10N90-VB becomes an ideal high-voltage switch solution, suitable for the design and development of various power electronic equipment.
K10N90-VB MOSFET is widely used in many fields, including but not limited to:
1. **Switching power supply**: Due to its high withstand voltage and low on-resistance characteristics, K10N90-VB is suitable for AC-DC converters and DC-DC converters, which can effectively improve power efficiency.
2. **Motor control**: In industrial motor drives and electric vehicles, K10N90-VB can be used as an efficient switching element to provide fast response and stable power transfer.
3. **Inverter**: Used in photovoltaic inverters and UPS systems, its high voltage capability can ensure stable operation under various working conditions.
4. **High frequency application**: K10N90-VB can operate under high frequency switching conditions and is suitable for use in radio transmission and reception equipment to ensure efficient signal transmission.
With these features and application scenarios, K10N90-VB becomes an ideal high-voltage switch solution, suitable for the design and development of various power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
