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K10A60D5-VB Product details
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K10A60D5-VB Product Introduction
K10A60D5-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-voltage power management and switching applications. Its maximum drain-source voltage (VDS) is up to 650V, suitable for high voltage requirements in various industrial and consumer electronics. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring that it turns on quickly at a lower gate-source voltage, improving the response speed of the system. The on-resistance (RDS(ON)) of K10A60D5-VB is 680mΩ at VGS of 10V, and it can support a drain current (ID) of up to 12A, which makes it excellent in high-power applications and is particularly suitable for circuit designs that require high energy efficiency and high reliability.
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K10A60D5-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-voltage power management and switching applications. Its maximum drain-source voltage (VDS) is up to 650V, suitable for high voltage requirements in various industrial and consumer electronics. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring that it turns on quickly at a lower gate-source voltage, improving the response speed of the system. The on-resistance (RDS(ON)) of K10A60D5-VB is 680mΩ at VGS of 10V, and it can support a drain current (ID) of up to 12A, which makes it excellent in high-power applications and is particularly suitable for circuit designs that require high energy efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: K10A60D5-VB
- **Package**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 680mΩ @ VGS=10V
- **Drain current (ID)**: 12A
- **Technology type**: Plannar
- **Maximum power dissipation (PD)**: 60W
- **Thermal resistance (RθJC)**: 1.5°C/W
- **Operating temperature range**: -55°C to 150°C
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- **Model**: K10A60D5-VB
- **Package**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 680mΩ @ VGS=10V
- **Drain current (ID)**: 12A
- **Technology type**: Plannar
- **Maximum power dissipation (PD)**: 60W
- **Thermal resistance (RθJC)**: 1.5°C/W
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications：
Applications and module descriptions
1. **Power converter**: K10A60D5-VB can be widely used in switching power supplies (SMPS) and DC-DC converters, using its high voltage and high current capabilities to ensure system stability and high efficiency under high loads, especially in computer power supplies and industrial power modules.
2. **Motor control**: This MOSFET is suitable for motor drive circuits, especially in situations where high efficiency and fast response are required, such as in the drive systems of power tools and electric vehicles, helping to achieve smoother control and longer battery life.
3. **Inverter application**: K10A60D5-VB is suitable for solar inverters and other renewable energy systems. It can effectively convert DC power into AC power, support high voltage and high power power conversion, and improve the utilization efficiency of renewable energy.
4. **LED lighting**: This MOSFET can be used in high-power LED drive circuits to provide stable current output, ensuring the brightness and consistency of LED lighting, and is particularly suitable for applications in commercial and industrial lighting solutions.
5. **High-frequency switching circuit**: Due to its low on-resistance and good switching characteristics, the K10A60D5-VB is suitable for high-frequency switching circuits and is widely used in communication equipment and computer systems to help improve overall energy efficiency and response speed.
1. **Power converter**: K10A60D5-VB can be widely used in switching power supplies (SMPS) and DC-DC converters, using its high voltage and high current capabilities to ensure system stability and high efficiency under high loads, especially in computer power supplies and industrial power modules.
2. **Motor control**: This MOSFET is suitable for motor drive circuits, especially in situations where high efficiency and fast response are required, such as in the drive systems of power tools and electric vehicles, helping to achieve smoother control and longer battery life.
3. **Inverter application**: K10A60D5-VB is suitable for solar inverters and other renewable energy systems. It can effectively convert DC power into AC power, support high voltage and high power power conversion, and improve the utilization efficiency of renewable energy.
4. **LED lighting**: This MOSFET can be used in high-power LED drive circuits to provide stable current output, ensuring the brightness and consistency of LED lighting, and is particularly suitable for applications in commercial and industrial lighting solutions.
5. **High-frequency switching circuit**: Due to its low on-resistance and good switching characteristics, the K10A60D5-VB is suitable for high-frequency switching circuits and is widely used in communication equipment and computer systems to help improve overall energy efficiency and response speed.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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