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K1093-VB Product details
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K1093-VB MOSFET Product Introduction
**K1093-VB** is a high-performance N-type MOSFET in TO220F package, designed for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is 60V and the maximum gate-source voltage (VGS) is ±20V, which is suitable for use in a variety of power management and control circuits. The threshold voltage (Vth) of the device is 1.7V, and it can turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of K1093-VB is only 27mΩ at VGS=10V, ensuring extremely low power consumption and heat generation. Using advanced Trench technology, this MOSFET provides excellent performance and high efficiency, and is widely used in switching power supplies, drive circuits and motor control.
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**K1093-VB** is a high-performance N-type MOSFET in TO220F package, designed for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is 60V and the maximum gate-source voltage (VGS) is ±20V, which is suitable for use in a variety of power management and control circuits. The threshold voltage (Vth) of the device is 1.7V, and it can turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of K1093-VB is only 27mΩ at VGS=10V, ensuring extremely low power consumption and heat generation. Using advanced Trench technology, this MOSFET provides excellent performance and high efficiency, and is widely used in switching power supplies, drive circuits and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
- TO220F package design has good heat dissipation capability, suitable for high power applications, and provides better electrical performance.
2. **Configuration**: Single N-type channel
- Single channel design improves current conduction efficiency and optimizes overall circuit performance.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage of the device, suitable for medium voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±20V
- Ensure the safety and reliability of the device under different working conditions.
5. **Threshold voltage (Vth)**: 1.7V
- The minimum gate voltage required for the device to turn on, ensuring fast switching characteristics.
6. **On-resistance (RDS(ON))**:
- 27mΩ @ VGS = 10V
- Lower on-resistance helps improve energy transfer efficiency and reduce heat loss.
7. **Current rating (ID)**: 45A
- The maximum continuous current of the device under normal operating conditions, suitable for a variety of application scenarios.
8. **Technology**: Trench
- Trench technology is used to ensure the stability and high performance of the device in high current and low voltage environments.
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1. **Package**: TO220F
- TO220F package design has good heat dissipation capability, suitable for high power applications, and provides better electrical performance.
2. **Configuration**: Single N-type channel
- Single channel design improves current conduction efficiency and optimizes overall circuit performance.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage of the device, suitable for medium voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±20V
- Ensure the safety and reliability of the device under different working conditions.
5. **Threshold voltage (Vth)**: 1.7V
- The minimum gate voltage required for the device to turn on, ensuring fast switching characteristics.
6. **On-resistance (RDS(ON))**:
- 27mΩ @ VGS = 10V
- Lower on-resistance helps improve energy transfer efficiency and reduce heat loss.
7. **Current rating (ID)**: 45A
- The maximum continuous current of the device under normal operating conditions, suitable for a variety of application scenarios.
8. **Technology**: Trench
- Trench technology is used to ensure the stability and high performance of the device in high current and low voltage environments.
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Domain and module applications：
Application Examples
1. **Switching Power Supply**:
K1093-VB can be widely used in switching power supply (SMPS) to provide stable and efficient power output for electronic devices, ensure high power conversion efficiency, and is suitable for computer power supply and power adapter.
2. **Motor Drive**:
In the motor drive circuit, K1093-VB can effectively control the start, stop and speed adjustment of the motor, and is suitable for driving various power tools and household appliances.
3. **LED Drive Circuit**:
This MOSFET is suitable for use in LED drive circuits, can efficiently control the brightness of LEDs, and is widely used in lighting equipment and display screens.
4. **Battery Management System**:
K1093-VB can be used for charging and discharging control in battery management systems to ensure battery safety and efficiency, and is widely used in electric vehicles and energy storage systems.
In summary, K1093-VB is an N-type MOSFET with superior electrical characteristics and high efficiency, suitable for a variety of medium voltage and high current applications, meeting the needs of modern electronic equipment for high performance and high reliability.
1. **Switching Power Supply**:
K1093-VB can be widely used in switching power supply (SMPS) to provide stable and efficient power output for electronic devices, ensure high power conversion efficiency, and is suitable for computer power supply and power adapter.
2. **Motor Drive**:
In the motor drive circuit, K1093-VB can effectively control the start, stop and speed adjustment of the motor, and is suitable for driving various power tools and household appliances.
3. **LED Drive Circuit**:
This MOSFET is suitable for use in LED drive circuits, can efficiently control the brightness of LEDs, and is widely used in lighting equipment and display screens.
4. **Battery Management System**:
K1093-VB can be used for charging and discharging control in battery management systems to ensure battery safety and efficiency, and is widely used in electric vehicles and energy storage systems.
In summary, K1093-VB is an N-type MOSFET with superior electrical characteristics and high efficiency, suitable for a variety of medium voltage and high current applications, meeting the needs of modern electronic equipment for high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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