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K1087-VB Product details
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K1087-VB Product Introduction
K1087-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-efficiency power management and switching applications. Its maximum drain-source voltage (VDS) is 100V, suitable for a variety of medium and high voltage applications. It has a threshold voltage (Vth) of 1.8V, ensuring that it turns on quickly at low gate-source voltage. The on-resistance (RDS(ON)) of K1087-VB is only 86mΩ at VGS of 10V, and can support a drain current (ID) of up to 18A, greatly improving energy efficiency and reducing energy loss. This MOSFET is particularly suitable for circuits requiring high current and fast switching.
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K1087-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-efficiency power management and switching applications. Its maximum drain-source voltage (VDS) is 100V, suitable for a variety of medium and high voltage applications. It has a threshold voltage (Vth) of 1.8V, ensuring that it turns on quickly at low gate-source voltage. The on-resistance (RDS(ON)) of K1087-VB is only 86mΩ at VGS of 10V, and can support a drain current (ID) of up to 18A, greatly improving energy efficiency and reducing energy loss. This MOSFET is particularly suitable for circuits requiring high current and fast switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: K1087-VB
- **Package**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 86mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology type**: Trench
- **Maximum power dissipation (PD)**: 94W
- **Thermal resistance (RθJC)**: 1.5°C/W
- **Operating temperature range**: -55°C to 150°C
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- **Model**: K1087-VB
- **Package**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 86mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology type**: Trench
- **Maximum power dissipation (PD)**: 94W
- **Thermal resistance (RθJC)**: 1.5°C/W
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications：
Application fields and module description
1. **Power management**: K1087-VB performs well in the field of power management and is suitable for switching power supplies (SMPS) and DC-DC converters. It can effectively improve the conversion efficiency of the system and reduce power heat loss. It is widely used in consumer electronics and industrial power solutions.
2. **Motor drive**: This MOSFET can be used in motor control circuits, especially in applications that require fast switching and high current, such as electric vehicles and industrial automation equipment, to ensure the efficiency and stability of motor operation.
3. **Inverter application**: K1087-VB is suitable for various inverter designs. For example, in solar inverters, it can efficiently convert DC power into AC power, helping to improve the overall energy efficiency and reliability of renewable energy systems.
4. **LED drive**: This MOSFET can be used in high-power LED drive circuits to provide stable current output, ensuring high brightness and consistency of LED lighting. It is widely used in commercial lighting and outdoor lighting systems.
5. **High-frequency switching circuit**: The low on-resistance and fast switching characteristics of K1087-VB make it an ideal choice for high-frequency switching circuits. It is used in communication equipment, computer power supplies and other electronic equipment that require high-frequency switching, helping to improve overall energy efficiency.
1. **Power management**: K1087-VB performs well in the field of power management and is suitable for switching power supplies (SMPS) and DC-DC converters. It can effectively improve the conversion efficiency of the system and reduce power heat loss. It is widely used in consumer electronics and industrial power solutions.
2. **Motor drive**: This MOSFET can be used in motor control circuits, especially in applications that require fast switching and high current, such as electric vehicles and industrial automation equipment, to ensure the efficiency and stability of motor operation.
3. **Inverter application**: K1087-VB is suitable for various inverter designs. For example, in solar inverters, it can efficiently convert DC power into AC power, helping to improve the overall energy efficiency and reliability of renewable energy systems.
4. **LED drive**: This MOSFET can be used in high-power LED drive circuits to provide stable current output, ensuring high brightness and consistency of LED lighting. It is widely used in commercial lighting and outdoor lighting systems.
5. **High-frequency switching circuit**: The low on-resistance and fast switching characteristics of K1087-VB make it an ideal choice for high-frequency switching circuits. It is used in communication equipment, computer power supplies and other electronic equipment that require high-frequency switching, helping to improve overall energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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