K100S04N1L-VB Product details
Product introduction:
K100S04N1L-VB is a high-efficiency single N-channel MOSFET designed for high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 40V, and it can withstand gate-source voltages (VGS) up to ±20V. The device uses a TO252 package, providing excellent heat dissipation and good electrical characteristics. Its threshold voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is 3mΩ at a gate voltage of 4.5V and 1.6mΩ at a gate voltage of 10V, ensuring extremely low power consumption under high load conditions. K100S04N1L-VB uses Trench technology to provide excellent conductivity and switching speed, and is widely used in power management and high-power circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter | Value |
| ------------------------ | ---------------------- |
| **Model** | K100S04N1L-VB |
| **Package type** | TO252 |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 40V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 3mΩ @ VGS=4.5V |
| | 1.6mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 120A |
| **Technology type** | Trench |
| **Operating temperature range** | -55°C to 150°C |
Domain and module applications:
1. **Power management system**
K100S04N1L-VB is very suitable for efficient power management systems, especially in DC-DC converters and power adapters. Due to its extremely low on-resistance and high current carrying capacity, it can significantly improve the efficiency of the system and reduce heat loss.
2. **Motor drive circuit**
This MOSFET can efficiently drive motors and is suitable for various motor control applications, such as brushless DC motors and stepper motor control. Its high current carrying capacity and fast switching performance make it an ideal choice for industrial automation and robotics.
3. **Electric vehicles**
K100S04N1L-VB is also widely used in the power management system of electric vehicles. Its high voltage resistance and high current characteristics enable it to provide excellent performance in battery management systems and motor drive systems, ensuring efficient operation of electric vehicles.
4. **LED lighting driver**
Due to its excellent switching characteristics and low conduction loss, K100S04N1L-VB is suitable for LED lighting driver circuits. It can efficiently control the working state of LEDs and improve the energy efficiency of the overall lighting system.
5. **Consumer electronics**
In various consumer electronics products, such as computer power supplies, home appliances, etc., K100S04N1L-VB can be used for power switches and signal conditioning circuits. Its high reliability and stability make it an ideal choice in these applications, improving product performance and user experience.
Technical support:
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