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K100A10N1-VB Product details

Product introduction:

K100A10N1-VB MOSFET Product Introduction

K100A10N1-VB is a high-efficiency N-channel MOSFET in TO220F package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, suitable for power management and power conversion circuits that require high voltage tolerance. The threshold voltage (Vth) of this MOSFET is 3V, ensuring fast turn-on at a relatively low gate voltage. Its on-resistance (RDS(ON)) is only 3.7mΩ at VGS of 10V. The extremely low conduction loss makes it perform well under high load conditions. The maximum drain current (ID) can reach 120A, making it very suitable for high power applications. K100A10N1-VB adopts advanced Trench technology, has good thermal performance and reliability, and is a key component in modern power supply and drive circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 100V 3V 120A 3.7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 100V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 100V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
K100A10N1-VB detailed parameter description

- **Package type**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 3.7mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench

Domain and module applications:

K100A10N1-VB application areas and module examples

1. **Power converter**: K100A10N1-VB performs well in DC-DC converters and AC-DC power adapters, can efficiently convert power, provide stable output voltage and current, and is suitable for consumer electronics and industrial equipment.

2. **Motor drive**: In motor control systems, K100A10N1-VB can drive high-power motors, suitable for the control of various power tools, fans and electric vehicles, providing excellent dynamic response and high efficiency.

3. **Photovoltaic inverter**: This MOSFET is very suitable for use in photovoltaic inverters, which can effectively manage the power collected from solar panels, ensure efficient power conversion and use, and improve the overall efficiency of the system.

4. **High-power LED driver**: K100A10N1-VB can be used for high-power LED driver circuits. With its high current carrying capacity and low conduction loss, it ensures stable operation of LEDs in an efficient state, and is suitable for applications such as lighting and signal lights.

Through its high performance and flexibility, K100A10N1-VB has become an ideal choice for many high-efficiency power management and drive applications, helping to meet the stringent power and efficiency requirements of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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