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K100A06N1-VB Product details

Product introduction:

K100A06N1-VB Product Introduction

K100A06N1-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high current and low on-resistance applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for applications such as medium and high voltage power management and switching power supplies. Its threshold voltage (Vth) is 3V, ensuring fast turn-on at a lower gate-source voltage. When VGS is 10V, the on-resistance (RDS(ON)) is only 2.6mΩ, supporting a drain current (ID) of up to 210A, significantly reducing heat loss and improving the energy efficiency of the system. It is widely used in electronic devices that require high current and low heat.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 60V 3V 210A 2.6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 60V 3V 210A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 60V 3V 210A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description

- **Model**: K100A06N1-VB
- **Package**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS=4.5V
- 2.6mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology type**: Trench
- **Maximum power dissipation (PD)**: 160W
- **Thermal resistance (RθJC)**: 0.5°C/W
- **Operating temperature range**: -55°C to 150°C

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Domain and module applications:

Applications and module descriptions

1. **Power management**: K100A06N1-VB plays a key role in power management systems. It can handle currents up to 210A and is suitable for high-efficiency power conversion and management, such as switching power supplies (SMPS) and DC-DC converters, to ensure system stability and efficiency under high load conditions.

2. **Motor drive**: This MOSFET is suitable for motor drive circuits. It can support large current output, provide fast response and high efficiency. It is widely used in motor control systems for industrial automation, robots and electric vehicles to help improve motor performance and efficiency.

3. **Inverter**: K100A06N1-VB is suitable for inverter applications, especially in the field of renewable energy, such as solar inverters, which can convert DC power into AC power, meet high current requirements, and improve energy utilization efficiency.

4. **LED driver**: In LED driver and lighting systems, this MOSFET can be used in high-power LED applications to provide stable current output, ensure the brightness and consistency of LED lighting, and is suitable for commercial and industrial lighting applications.

5. **High-frequency switching circuit**: K100A06N1-VB can be used in high-frequency switching circuits, and can maintain low on-resistance during fast switching. It is suitable for communication equipment, computer power supplies and other electronic equipment that require high-frequency switching to improve overall energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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