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JCS9N90WT-VB Product details
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JCS9N90WT-VB MOSFET Product Introduction:
**JCS9N90WT-VB** is a high-performance N-channel MOSFET designed for high voltage applications with a drain-source voltage (VDS) rating of 900V. This device uses SJ_Multi-EPI technology to provide excellent conductivity and thermal management capabilities, enabling it to perform well in a variety of electrical and electronic systems. Its on-resistance (RDS(ON)) is 750mΩ at a 10V gate drive, allowing a large current to pass through, with a maximum drain current of up to 9A. This feature makes the JCS9N90WT-VB ideal for power conversion, switching power supplies and other applications requiring high reliability.
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**JCS9N90WT-VB** is a high-performance N-channel MOSFET designed for high voltage applications with a drain-source voltage (VDS) rating of 900V. This device uses SJ_Multi-EPI technology to provide excellent conductivity and thermal management capabilities, enabling it to perform well in a variety of electrical and electronic systems. Its on-resistance (RDS(ON)) is 750mΩ at a 10V gate drive, allowing a large current to pass through, with a maximum drain current of up to 9A. This feature makes the JCS9N90WT-VB ideal for power conversion, switching power supplies and other applications requiring high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description of JCS9N90WT-VB:
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **@VGS=10V: 750mΩ**
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Package**: TO3P
- **Operating temperature range**: Typically -55°C to 150°C (depending on manufacturer's details)
- **Power dissipation (PD)**: Due to the limitations of the TO3P package, further confirmation is required.
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- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **@VGS=10V: 750mΩ**
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Package**: TO3P
- **Operating temperature range**: Typically -55°C to 150°C (depending on manufacturer's details)
- **Power dissipation (PD)**: Due to the limitations of the TO3P package, further confirmation is required.
---
Domain and module applications：
Applicable fields and examples:
1. **High-voltage power conversion**:
JCS9N90WT-VB is widely used in **high-voltage DC-DC converters**, which can effectively convert 900V input voltage to the required low voltage, and is suitable for high-voltage power supply systems.
2. **Switching power supply**:
Due to its excellent conductive properties, this MOSFET is very suitable for **switching power supply** (SMPS), which can reduce switching losses and improve the overall efficiency of the power supply. It is widely used in industrial power supplies and telecommunications equipment.
3. **Motor control**:
In **motor drive** applications, JCS9N90WT-VB can be used in the drive circuit of high-voltage motors, which can withstand higher voltages and currents to ensure the smooth operation of the motor.
4. **Lighting control system**:
In LED lighting and other lighting systems, this MOSFET can be used as a switching element to achieve efficient switching and dimming functions of lights, and is suitable for modern lighting control.
5. **Industrial equipment**:
Suitable for various **industrial equipment**, such as welding equipment, inverters and UPS systems, this MOSFET can provide reliable performance in harsh working environments and ensure stable operation of the equipment.
In summary, **JCS9N90WT-VB** is an N-channel MOSFET suitable for high-voltage applications, with high performance and reliability, which can meet the needs of a variety of industrial and consumer electronic devices.
1. **High-voltage power conversion**:
JCS9N90WT-VB is widely used in **high-voltage DC-DC converters**, which can effectively convert 900V input voltage to the required low voltage, and is suitable for high-voltage power supply systems.
2. **Switching power supply**:
Due to its excellent conductive properties, this MOSFET is very suitable for **switching power supply** (SMPS), which can reduce switching losses and improve the overall efficiency of the power supply. It is widely used in industrial power supplies and telecommunications equipment.
3. **Motor control**:
In **motor drive** applications, JCS9N90WT-VB can be used in the drive circuit of high-voltage motors, which can withstand higher voltages and currents to ensure the smooth operation of the motor.
4. **Lighting control system**:
In LED lighting and other lighting systems, this MOSFET can be used as a switching element to achieve efficient switching and dimming functions of lights, and is suitable for modern lighting control.
5. **Industrial equipment**:
Suitable for various **industrial equipment**, such as welding equipment, inverters and UPS systems, this MOSFET can provide reliable performance in harsh working environments and ensure stable operation of the equipment.
In summary, **JCS9N90WT-VB** is an N-channel MOSFET suitable for high-voltage applications, with high performance and reliability, which can meet the needs of a variety of industrial and consumer electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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