JCS9N90ANT-VB Product details
Product introduction:
JCS9N90ANT is a high-performance single N-channel MOSFET in TO3P package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 900V, which can meet the needs of harsh voltage environments. The gate-source voltage (VGS) is ±30V and the threshold voltage (Vth) is 3.5V, ensuring effective conduction even at relatively low gate voltages. The on-resistance (RDS(ON)) of JCS9N90ANT at a gate voltage of 10V is 750mΩ, which has excellent conductivity and is suitable for efficient power conversion. This MOSFET adopts SJ_Multi-EPI technology, providing excellent thermal stability and current carrying capacity, and is widely used in power management, switching power supplies, inverters and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
| Parameter | Value |
| ---------------- | ---------------------- |
| **Package type** | TO3P |
| **Configuration** | Single N-channel|
| **Drain-source voltage** | 900V |
| **Gate-source voltage** | ±30V |
| **Threshold voltage** | 3.5V |
| **On-resistance** | 750mΩ @ VGS=10V |
| **Drain current** | 9A |
| **Technology type** | SJ_Multi-EPI |
Domain and module applications:
1. **High-voltage power management system**
JCS9N90ANT is widely used in high-voltage power management systems, such as power adapters and industrial power supplies. The 900V withstand voltage of this MOSFET ensures that it can cope with high-voltage environments, and its low on-resistance reduces energy losses and improves the overall efficiency of the system.
2. **Switching power supply (SMPS)**
In switching power supply design, JCS9N90ANT can be used as the main switching element for power modules that require high-frequency operation. Its high voltage and medium current capabilities make it an ideal choice for optimizing the energy conversion process and help improve system performance.
3. **Solar inverter**
JCS9N90ANT is widely used in solar inverters, which can convert DC power into AC power and support high voltage and high power environments. The superior characteristics of this MOSFET enable it to perform well in renewable energy systems, improving energy conversion efficiency and system reliability.
4. **Motor drive and control**
This MOSFET is also suitable for motor control and drive systems. With its high voltage tolerance and good conduction performance, the JCS9N90ANT can effectively control the start, stop and speed of the motor, and is widely used in industrial automation equipment and household appliances, enhancing the response speed and accuracy of the system.
5. **Power converter and high voltage applications**
JCS9N90ANT is suitable for various power converters, such as DC-DC converters and AC-DC converters. In high-voltage power supply applications, its excellent thermal characteristics and stability ensure that the equipment can still maintain good performance under high load conditions, meeting the high standards of modern electronic equipment.
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