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JCS9N50VC-VB Product details
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JCS9N50VC-VB MOSFET Product Introduction
**JCS9N50VC-VB** is a high-voltage N-type MOSFET in TO-251 package, designed for high voltage and high current applications. The device can withstand drain-source voltages up to 650V, and the maximum gate-source voltage (VGS) is ±30V, ensuring its safety and stability in a variety of working environments. The on-resistance (RDS(ON)) of JCS9N50VC is 700mΩ at VGS=10V, with low power consumption and excellent conductivity. Using SJ_Multi-EPI technology, this MOSFET also has good thermal management characteristics and reliability, suitable for various power electronic equipment.
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**JCS9N50VC-VB** is a high-voltage N-type MOSFET in TO-251 package, designed for high voltage and high current applications. The device can withstand drain-source voltages up to 650V, and the maximum gate-source voltage (VGS) is ±30V, ensuring its safety and stability in a variety of working environments. The on-resistance (RDS(ON)) of JCS9N50VC is 700mΩ at VGS=10V, with low power consumption and excellent conductivity. Using SJ_Multi-EPI technology, this MOSFET also has good thermal management characteristics and reliability, suitable for various power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO-251
- TO-251 package has good heat dissipation performance and easy integration, suitable for high-power applications.
2. **Configuration**: Single N-type channel
- Single channel design optimizes current conduction efficiency and is suitable for a variety of power electronic circuits.
3. **Drain-source voltage (VDS)**: 650V
- Maximum drain-source voltage, ensuring that the device can work safely in high-voltage circuits, suitable for high-voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and source of the device, ensuring safe operation and reducing the risk of failure.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to turn on, ensuring good switching characteristics, suitable for a variety of control circuits.
6. **On-resistance (RDS(ON))**:
- 700mΩ @ VGS = 10V
- Lower on-resistance improves power transfer efficiency and is suitable for high-efficiency energy conversion applications.
7. **Current Rating (ID)**: 7A
- The maximum continuous current of the device under normal operating conditions, ensuring stable operation in a variety of applications.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves device performance and reliability and is suitable for high-voltage and high-temperature application environments.
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1. **Package**: TO-251
- TO-251 package has good heat dissipation performance and easy integration, suitable for high-power applications.
2. **Configuration**: Single N-type channel
- Single channel design optimizes current conduction efficiency and is suitable for a variety of power electronic circuits.
3. **Drain-source voltage (VDS)**: 650V
- Maximum drain-source voltage, ensuring that the device can work safely in high-voltage circuits, suitable for high-voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and source of the device, ensuring safe operation and reducing the risk of failure.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to turn on, ensuring good switching characteristics, suitable for a variety of control circuits.
6. **On-resistance (RDS(ON))**:
- 700mΩ @ VGS = 10V
- Lower on-resistance improves power transfer efficiency and is suitable for high-efficiency energy conversion applications.
7. **Current Rating (ID)**: 7A
- The maximum continuous current of the device under normal operating conditions, ensuring stable operation in a variety of applications.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves device performance and reliability and is suitable for high-voltage and high-temperature application environments.
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Domain and module applications：
Application Examples
1. **Switching Power Supply**:
JCS9N50VC-VB is very suitable for high-efficiency switching power supply design, capable of stable operation at voltages up to 650V, providing efficient energy conversion, and is widely used in power adapters and power management modules.
2. **Motor Control**:
This MOSFET can be used in motor drive circuits, especially in applications that require high voltage and high current control, such as the motor drive system of electric vehicles, to ensure high efficiency and stability of the motor.
3. **Inverter**:
In inverter design, JCS9N50VC can be used as a high-voltage DC to AC converter, especially in renewable energy systems (such as solar and wind power), which can effectively manage energy transmission and improve overall system efficiency.
4. **High-voltage LED driver**:
This device is suitable for use in high-voltage LED lighting driver circuits. It can accurately control the power output of LEDs, provide stable brightness and high-quality lighting effects, and is suitable for various commercial and industrial lighting solutions.
In summary, JCS9N50VC-VB is a high-performance N-type MOSFET with high voltage, low on-resistance and excellent reliability. It is suitable for a variety of high-voltage power electronics applications and is an important component in modern power management and switching circuit design.
1. **Switching Power Supply**:
JCS9N50VC-VB is very suitable for high-efficiency switching power supply design, capable of stable operation at voltages up to 650V, providing efficient energy conversion, and is widely used in power adapters and power management modules.
2. **Motor Control**:
This MOSFET can be used in motor drive circuits, especially in applications that require high voltage and high current control, such as the motor drive system of electric vehicles, to ensure high efficiency and stability of the motor.
3. **Inverter**:
In inverter design, JCS9N50VC can be used as a high-voltage DC to AC converter, especially in renewable energy systems (such as solar and wind power), which can effectively manage energy transmission and improve overall system efficiency.
4. **High-voltage LED driver**:
This device is suitable for use in high-voltage LED lighting driver circuits. It can accurately control the power output of LEDs, provide stable brightness and high-quality lighting effects, and is suitable for various commercial and industrial lighting solutions.
In summary, JCS9N50VC-VB is a high-performance N-type MOSFET with high voltage, low on-resistance and excellent reliability. It is suitable for a variety of high-voltage power electronics applications and is an important component in modern power management and switching circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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