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JCS8N65FB-O-F-N-B-VB Product details
Back to previous pageProduct introduction：
1. JCS8N65FB-OFNB-VB Product Introduction
JCS8N65FB-OFNB-VB is a high-voltage single N-channel MOSFET in TO220F package, designed for high-voltage and high-efficiency power electronics applications. The device has a drain-source voltage withstand capability of 650V and is suitable for various power management and control systems. It has a rated drain current of 7A and a relatively low on-resistance (RDS(ON) of 1100mΩ@VGS=10V), ensuring excellent conductivity and thermal management in high-voltage applications. This MOSFET adopts planar technology (Plannar), has good switching characteristics and thermal stability, and is an important component in modern power electronics design.
JCS8N65FB-OFNB-VB is a high-voltage single N-channel MOSFET in TO220F package, designed for high-voltage and high-efficiency power electronics applications. The device has a drain-source voltage withstand capability of 650V and is suitable for various power management and control systems. It has a rated drain current of 7A and a relatively low on-resistance (RDS(ON) of 1100mΩ@VGS=10V), ensuring excellent conductivity and thermal management in high-voltage applications. This MOSFET adopts planar technology (Plannar), has good switching characteristics and thermal stability, and is an important component in modern power electronics design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of JCS8N65FB-OFNB-VB
1. **Package type**: TO220F
This package provides good heat dissipation and is suitable for high voltage and medium power applications.
2. **Channel type**: Single N-channel
This configuration is suitable for switching and amplification circuits and can provide excellent switching speed and efficiency.
3. **Drain-source voltage (VDS)**: 650V
High voltage tolerance enables it to perform well in various high voltage applications and meet different application requirements.
4. **Gate drive voltage (VGS)**: ±30V
Allows flexible gate drive design and improves compatibility and applicability.
5. **Threshold voltage (Vth)**: 3.5V
The appropriate threshold voltage ensures that the device can turn on quickly at a lower voltage and improve switching speed.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
Low on-resistance helps reduce power loss and improve energy efficiency, especially suitable for high current applications.
7. **Maximum drain current (ID)**: 7A
The current load it can support makes it well adaptable in various power management and control applications.
8. **Technology type**: Planar technology
Designed with planar technology, it provides good electrical characteristics and reliability, suitable for high frequency and high voltage environments.
1. **Package type**: TO220F
This package provides good heat dissipation and is suitable for high voltage and medium power applications.
2. **Channel type**: Single N-channel
This configuration is suitable for switching and amplification circuits and can provide excellent switching speed and efficiency.
3. **Drain-source voltage (VDS)**: 650V
High voltage tolerance enables it to perform well in various high voltage applications and meet different application requirements.
4. **Gate drive voltage (VGS)**: ±30V
Allows flexible gate drive design and improves compatibility and applicability.
5. **Threshold voltage (Vth)**: 3.5V
The appropriate threshold voltage ensures that the device can turn on quickly at a lower voltage and improve switching speed.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
Low on-resistance helps reduce power loss and improve energy efficiency, especially suitable for high current applications.
7. **Maximum drain current (ID)**: 7A
The current load it can support makes it well adaptable in various power management and control applications.
8. **Technology type**: Planar technology
Designed with planar technology, it provides good electrical characteristics and reliability, suitable for high frequency and high voltage environments.
Domain and module applications：
3. Application fields and module examples of JCS8N65FB-OFNB-VB
1. **Switching power supply**
JCS8N65FB-OFNB-VB is widely used in switching power supply design, suitable for DC-DC converters and AC-DC adapters, and can achieve efficient power conversion and provide stable voltage output.
2. **Motor drive**
In the motor control circuit, this MOSFET can be used as a switching element to achieve efficient control of the motor, suitable for power tools, household appliances and industrial equipment.
3. **LED drive power supply**
This device can be used as a switch in the LED drive circuit, providing high current and high voltage support, suitable for various lighting applications, including architectural lighting, indoor and outdoor lamps, etc.
4. **Power converter**
JCS8N65FB-OFNB-VB can also be used in various power converters, such as inverters and rectifiers, and is widely used in renewable energy (such as solar inverters) and power systems.
5. **Power Management**
This MOSFET plays an important role in the power management module, which can achieve efficient power distribution and energy management, and improve the overall performance and reliability of the system.
With its excellent performance and wide application applicability, JCS8N65FB-OFNB-VB has become an ideal choice for high-voltage and high-efficiency power electronics design.
1. **Switching power supply**
JCS8N65FB-OFNB-VB is widely used in switching power supply design, suitable for DC-DC converters and AC-DC adapters, and can achieve efficient power conversion and provide stable voltage output.
2. **Motor drive**
In the motor control circuit, this MOSFET can be used as a switching element to achieve efficient control of the motor, suitable for power tools, household appliances and industrial equipment.
3. **LED drive power supply**
This device can be used as a switch in the LED drive circuit, providing high current and high voltage support, suitable for various lighting applications, including architectural lighting, indoor and outdoor lamps, etc.
4. **Power converter**
JCS8N65FB-OFNB-VB can also be used in various power converters, such as inverters and rectifiers, and is widely used in renewable energy (such as solar inverters) and power systems.
5. **Power Management**
This MOSFET plays an important role in the power management module, which can achieve efficient power distribution and energy management, and improve the overall performance and reliability of the system.
With its excellent performance and wide application applicability, JCS8N65FB-OFNB-VB has become an ideal choice for high-voltage and high-efficiency power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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