JCS8N60F-O-F-N-B-VB Product details
Product introduction:
JCS8N60F is a high-performance single N-channel MOSFET designed for high voltage and medium current applications, with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, which ensures efficient conduction at a relatively low gate voltage. The device has an on-resistance (RDS(ON)) of 830mΩ at a gate voltage of 10V, ensuring excellent power efficiency. JCS8N60F adopts TO220F package, which has good heat dissipation performance and is suitable for a variety of industrial and consumer electronics applications. Its planar technology (Plannar) makes the device stable at high temperature and high voltage, suitable for high reliability design.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| Parameter| Value|
| ---------------- | ---------------------- |
| **Package type** | TO220F |
| **Configuration** | Single N-channel|
| **Drain-source voltage** | 650V |
| **Gate-source voltage** | ±30V |
| **Threshold voltage** | 3.5V |
| **On-resistance** | 830mΩ @ VGS=10V |
| **Drain current** | 10A |
| **Technology type** | Plannar |
Domain and module applications:
1. **High-voltage power management**
JCS8N60F is widely used in high-voltage power management systems, including power adapters and industrial power supplies. In these applications, the MOSFET can withstand input voltages up to 650V, while its low on-resistance ensures that energy losses are minimized during operation, thereby improving overall energy efficiency.
2. **Switching power supply (SMPS)**
In switching power supply modules, JCS8N60F can be used as the main switching element, capable of high-frequency switching operations. Its excellent thermal characteristics and high-voltage capabilities make it suitable for use in demanding power supply designs, ensuring the stability and reliability of the system under high load conditions.
3. **Motor drive and control**
JCS8N60F is suitable for motor drive and control circuits, especially in medium-sized motors that require high-voltage drive. It can effectively control the start and stop and speed regulation of motors, and is widely used in industrial automation and household appliances, improving the accuracy and response speed of control.
4. **Inverters and power converters**
This MOSFET has important applications in solar inverters and power converters. With its 650V withstand voltage characteristics and good conduction performance, it ensures effective reduction of power consumption and improvement of system efficiency during energy conversion, especially in renewable energy systems.
5. **Automotive electronics applications**
In the field of automotive electronics, JCS8N60F can be used for electric windows, lights and other high-power electronic devices. Its reliable performance and high withstand voltage characteristics can ensure stability and long life in the automotive working environment, meeting the high standards of modern automotive electronics.
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