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JCS8N60FB-O-F-N-B-VB Product details
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JCS8N60FB-OFNB-VB MOSFET Product Introduction
**JCS8N60FB-OFNB-VB** is a high-voltage N-type MOSFET in a TO-220F package, designed to withstand drain-source voltages up to 650V, and is particularly suitable for power electronics applications. The device has a maximum gate-source voltage (VGS) of ±30V, ensuring safety and stability under a variety of operating conditions. Its on-resistance (RDS(ON)) is 830mΩ at VGS=10V, with lower power consumption and higher conduction efficiency. With its Plannar technology, the JCS8N60FB provides good thermal management performance and reliability, and can operate stably in high temperature and high voltage environments, making it very suitable for applications such as modern switching power supplies and motor drives.
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**JCS8N60FB-OFNB-VB** is a high-voltage N-type MOSFET in a TO-220F package, designed to withstand drain-source voltages up to 650V, and is particularly suitable for power electronics applications. The device has a maximum gate-source voltage (VGS) of ±30V, ensuring safety and stability under a variety of operating conditions. Its on-resistance (RDS(ON)) is 830mΩ at VGS=10V, with lower power consumption and higher conduction efficiency. With its Plannar technology, the JCS8N60FB provides good thermal management performance and reliability, and can operate stably in high temperature and high voltage environments, making it very suitable for applications such as modern switching power supplies and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO-220F
- The TO-220F package design enables the device to have excellent heat dissipation performance, suitable for medium to high power applications, and easy to install and dissipate heat.
2. **Configuration**: Single N-type channel
- The single-channel design optimizes the current conduction efficiency and is suitable for a variety of power electronics applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand, suitable for high-voltage circuits, ensuring the safety and reliability of the system.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source, ensuring the safety of the device under different working conditions.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, ensuring good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 830mΩ @ VGS = 10V
- Lower on-resistance is suitable for medium power applications, which can effectively reduce energy loss and improve overall efficiency.
7. **Current rating (ID)**: 10A
- The maximum continuous current that the device can handle under normal operating conditions, suitable for a variety of power applications.
8. **Technology**: Plannar
- Plannar technology ensures the reliability and stability of the device in high voltage and high temperature environments, suitable for a variety of power electronics applications.
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1. **Package**: TO-220F
- The TO-220F package design enables the device to have excellent heat dissipation performance, suitable for medium to high power applications, and easy to install and dissipate heat.
2. **Configuration**: Single N-type channel
- The single-channel design optimizes the current conduction efficiency and is suitable for a variety of power electronics applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand, suitable for high-voltage circuits, ensuring the safety and reliability of the system.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source, ensuring the safety of the device under different working conditions.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, ensuring good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 830mΩ @ VGS = 10V
- Lower on-resistance is suitable for medium power applications, which can effectively reduce energy loss and improve overall efficiency.
7. **Current rating (ID)**: 10A
- The maximum continuous current that the device can handle under normal operating conditions, suitable for a variety of power applications.
8. **Technology**: Plannar
- Plannar technology ensures the reliability and stability of the device in high voltage and high temperature environments, suitable for a variety of power electronics applications.
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Domain and module applications：
Application Examples
1. **Switching Power Supply**:
JCS8N60FB-OFNB-VB is very suitable for high-efficiency switching power supply design. It can operate at voltages up to 650V, provide stable current output, and perform well in low power consumption. It is widely used in power adapters and power conversion devices.
2. **Motor Control**:
This MOSFET can be used in motor drive circuits. As a switching device, it can realize the start and stop control and speed regulation of the motor, ensuring the efficient operation and stability of the motor. It is suitable for industrial automation and power tool applications.
3. **Inverter**:
In inverter design, JCS8N60FB can be used to convert DC to AC. Especially in solar inverters, it can efficiently process electrical energy and provide reliable performance.
4. **LED drive circuit**:
This device is suitable for use in LED lighting drive circuits. It can accurately control the working state of LEDs, improve brightness stability and energy efficiency, and is widely used in various lighting solutions.
In summary, JCS8N60FB-OFNB-VB is a high-performance N-type MOSFET with high voltage, low on-resistance and good reliability. It is suitable for a variety of high-voltage power electronics applications and is an important component in modern power management and switching circuit design.
1. **Switching Power Supply**:
JCS8N60FB-OFNB-VB is very suitable for high-efficiency switching power supply design. It can operate at voltages up to 650V, provide stable current output, and perform well in low power consumption. It is widely used in power adapters and power conversion devices.
2. **Motor Control**:
This MOSFET can be used in motor drive circuits. As a switching device, it can realize the start and stop control and speed regulation of the motor, ensuring the efficient operation and stability of the motor. It is suitable for industrial automation and power tool applications.
3. **Inverter**:
In inverter design, JCS8N60FB can be used to convert DC to AC. Especially in solar inverters, it can efficiently process electrical energy and provide reliable performance.
4. **LED drive circuit**:
This device is suitable for use in LED lighting drive circuits. It can accurately control the working state of LEDs, improve brightness stability and energy efficiency, and is widely used in various lighting solutions.
In summary, JCS8N60FB-OFNB-VB is a high-performance N-type MOSFET with high voltage, low on-resistance and good reliability. It is suitable for a variety of high-voltage power electronics applications and is an important component in modern power management and switching circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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