JCS830V-VB Product details
Product introduction:
**JCS830V-VB** is a high-performance N-channel MOSFET designed for high-voltage and high-efficiency power management. This MOSFET adopts **SJ_Multi-EPI** technology and has a 650V withstand voltage capability, making it suitable for demanding high-voltage applications. It has a low on-resistance (RDS(ON)) of 950mΩ under a 10V gate drive, which can effectively reduce power consumption and improve system efficiency. The package type of this device is **TO-251**, which provides good heat dissipation performance and is suitable for a wide range of industrial and consumer electronics fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **@VGS=10V: 950mΩ**
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package**: TO-251
- **Operating temperature range**: Typically -55°C to 150°C (depending on manufacturer's details)
- **Power dissipation (PD)**: Due to the limitations of the TO-251 package, further confirmation is required.
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Domain and module applications:
1. **Power conversion**:
JCS830V-VB is widely used in **high voltage DC-DC converters**, which can efficiently convert high voltage to low voltage to meet the needs of power modules in various industries and electronic equipment.
2. **Motor drive**:
This MOSFET is very suitable for **motor control**, such as DC motor drive, providing stable current and high efficiency to ensure reliable operation under various load conditions.
3. **Switching power supply**:
In **switching power supply** (SMPS) applications, JCS830V-VB can significantly reduce switching losses and improve overall energy efficiency, and is suitable for computer power supplies, chargers and consumer electronics.
4. **Lighting control**:
In **LED drive** and other lighting systems, JCS830V-VB can be used as a switching element to control the switching and dimming functions of lighting, providing energy-saving and efficient lighting solutions.
5. **Household appliances**:
This MOSFET can be widely used in **household appliances**, such as power management of air conditioners and refrigerators, to provide efficient power supply and control and enhance user experience.
In summary, **JCS830V-VB** is an N-channel MOSFET with wide applicability in high-voltage power management and switching applications, especially suitable for electronic devices that require high efficiency and stability.
Technical support:
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