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JCS830R-O-R-N-B-VB Product details
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1. JCS830R-ORNB-VB Product Introduction
JCS830R-ORNB-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high-voltage applications. The device has a maximum drain-source voltage of up to 650V, suitable for a variety of power management and conversion applications. It has a rated drain current of 5A and uses SJ_Multi-EPI technology to provide excellent conductivity and low on-resistance, ensuring high efficiency and reliability in high-voltage environments. This MOSFET performs well in applications with higher switching frequencies and is an important component in modern power electronics design.
JCS830R-ORNB-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high-voltage applications. The device has a maximum drain-source voltage of up to 650V, suitable for a variety of power management and conversion applications. It has a rated drain current of 5A and uses SJ_Multi-EPI technology to provide excellent conductivity and low on-resistance, ensuring high efficiency and reliability in high-voltage environments. This MOSFET performs well in applications with higher switching frequencies and is an important component in modern power electronics design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of JCS830R-ORNB-VB
1. **Package type**: TO252
This package design helps improve heat dissipation performance and is suitable for high voltage and medium power applications.
2. **Channel type**: Single N-channel
This design makes it perform well in switching and amplification circuits and is suitable for a variety of power management applications.
3. **Drain-source voltage (VDS)**: 650V
High voltage tolerance makes it suitable for a variety of high voltage power supplies and power electronic equipment.
4. **Gate drive voltage (VGS)**: ±30V
Adapt to a variety of circuit designs and enhance the flexibility and compatibility of the device.
5. **Threshold voltage (Vth)**: 3.5V
Reasonable threshold voltage ensures fast turn-on, improves switching speed, and is suitable for high frequency applications.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
Moderate on-resistance can reduce power loss and improve energy efficiency, especially suitable for high current applications.
7. **Maximum drain current (ID)**: 5A
Able to withstand current load, suitable for a variety of power management and control applications.
8. **Technology type**: SJ_Multi-EPI
Using advanced SJ_Multi-EPI technology to improve the electrical characteristics and thermal stability of the device, suitable for high frequency and high voltage environments.
1. **Package type**: TO252
This package design helps improve heat dissipation performance and is suitable for high voltage and medium power applications.
2. **Channel type**: Single N-channel
This design makes it perform well in switching and amplification circuits and is suitable for a variety of power management applications.
3. **Drain-source voltage (VDS)**: 650V
High voltage tolerance makes it suitable for a variety of high voltage power supplies and power electronic equipment.
4. **Gate drive voltage (VGS)**: ±30V
Adapt to a variety of circuit designs and enhance the flexibility and compatibility of the device.
5. **Threshold voltage (Vth)**: 3.5V
Reasonable threshold voltage ensures fast turn-on, improves switching speed, and is suitable for high frequency applications.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
Moderate on-resistance can reduce power loss and improve energy efficiency, especially suitable for high current applications.
7. **Maximum drain current (ID)**: 5A
Able to withstand current load, suitable for a variety of power management and control applications.
8. **Technology type**: SJ_Multi-EPI
Using advanced SJ_Multi-EPI technology to improve the electrical characteristics and thermal stability of the device, suitable for high frequency and high voltage environments.
Domain and module applications：
III. Application fields and module examples of JCS830R-ORNB-VB
1. **Switching power supply**
JCS830R-ORNB-VB is crucial in the design of switching power supply. It is widely used in DC-DC converters and AC-DC adapters. It can efficiently convert power and improve the overall energy efficiency of the system.
2. **Motor drive**
This MOSFET can be used in motor drive control circuits. It is suitable for efficiently controlling the start and stop and speed regulation of motors. It is widely used in electric vehicles and industrial automation.
3. **LED drive power supply**
In the LED drive circuit, JCS830R-ORNB-VB can be used as a switching element to control the current of high-voltage LED lamps. It is suitable for various lighting systems, including commercial lighting and home lighting.
4. **Home appliance power management**
This device can also be used in the power management of home appliances, such as rice cookers, washing machines and refrigerators, to improve the performance and reliability of products by providing high-efficiency power solutions.
With its excellent performance and reliability, JCS830R-ORNB-VB is an ideal choice for high voltage and medium power applications, providing a solid solution for various power electronics applications.
1. **Switching power supply**
JCS830R-ORNB-VB is crucial in the design of switching power supply. It is widely used in DC-DC converters and AC-DC adapters. It can efficiently convert power and improve the overall energy efficiency of the system.
2. **Motor drive**
This MOSFET can be used in motor drive control circuits. It is suitable for efficiently controlling the start and stop and speed regulation of motors. It is widely used in electric vehicles and industrial automation.
3. **LED drive power supply**
In the LED drive circuit, JCS830R-ORNB-VB can be used as a switching element to control the current of high-voltage LED lamps. It is suitable for various lighting systems, including commercial lighting and home lighting.
4. **Home appliance power management**
This device can also be used in the power management of home appliances, such as rice cookers, washing machines and refrigerators, to improve the performance and reliability of products by providing high-efficiency power solutions.
With its excellent performance and reliability, JCS830R-ORNB-VB is an ideal choice for high voltage and medium power applications, providing a solid solution for various power electronics applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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