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JCS7N65F-O-F-N-B-VB Product details
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JCS7N65F-OFNB-VB MOSFET Product Introduction
**JCS7N65F-OFNB-VB** is a high voltage N-type MOSFET in TO-220F package, designed to withstand drain-source voltage up to 650V, suitable for various power electronics applications. The maximum gate-source voltage (VGS) of the device is ±30V, ensuring the safety and stability of the device under different operating conditions. Its on-resistance (RDS(ON)) is 1100mΩ at VGS=10V, providing good power efficiency and low power consumption characteristics. With its Plannar technology, the JCS7N65F is able to provide excellent performance in high temperature and high voltage environments, and is very suitable for modern power management and switching circuits.
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**JCS7N65F-OFNB-VB** is a high voltage N-type MOSFET in TO-220F package, designed to withstand drain-source voltage up to 650V, suitable for various power electronics applications. The maximum gate-source voltage (VGS) of the device is ±30V, ensuring the safety and stability of the device under different operating conditions. Its on-resistance (RDS(ON)) is 1100mΩ at VGS=10V, providing good power efficiency and low power consumption characteristics. With its Plannar technology, the JCS7N65F is able to provide excellent performance in high temperature and high voltage environments, and is very suitable for modern power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO-220F
- The TO-220F package design enables the device to have excellent heat dissipation performance, suitable for medium to high power applications, and can be easily installed and heat dissipated.
2. **Configuration**: Single N-type channel
- The single-channel design optimizes the current conduction efficiency and is suitable for a variety of power electronics applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand is suitable for high-voltage circuits to ensure the safety and reliability of the system.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source can ensure the safety of the device under different working conditions.
5. **Threshold Voltage (Vth)**: 3.5V
- Minimum gate voltage required for the device to start conducting, ensuring good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS = 10V
- Higher on-resistance is suitable for medium power applications and can reduce energy loss to a certain extent.
7. **Current Rating (ID)**: 7A
- Maximum continuous current that the device can handle under normal operating conditions, suitable for lower load applications.
8. **Technology**: Plannar
- Plannar technology ensures the reliability and stability of the device in high voltage and high temperature environments, suitable for various power electronics applications.
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1. **Package**: TO-220F
- The TO-220F package design enables the device to have excellent heat dissipation performance, suitable for medium to high power applications, and can be easily installed and heat dissipated.
2. **Configuration**: Single N-type channel
- The single-channel design optimizes the current conduction efficiency and is suitable for a variety of power electronics applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand is suitable for high-voltage circuits to ensure the safety and reliability of the system.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source can ensure the safety of the device under different working conditions.
5. **Threshold Voltage (Vth)**: 3.5V
- Minimum gate voltage required for the device to start conducting, ensuring good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS = 10V
- Higher on-resistance is suitable for medium power applications and can reduce energy loss to a certain extent.
7. **Current Rating (ID)**: 7A
- Maximum continuous current that the device can handle under normal operating conditions, suitable for lower load applications.
8. **Technology**: Plannar
- Plannar technology ensures the reliability and stability of the device in high voltage and high temperature environments, suitable for various power electronics applications.
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Domain and module applications：
Application Examples
1. **Switching Power Supply**:
JCS7N65F-OFNB-VB is very suitable for high-efficiency switching power supply design. It can handle drain-source voltage up to 650V, provide stable current output, and perform well in low power consumption state. It is widely used in power adapters and power conversion devices.
2. **Motor Control**:
This MOSFET can be used in motor drive circuits. As a switching device, it can realize the start-stop control and speed regulation of the motor, ensuring the efficient operation and stability of the motor. It is suitable for industrial automation and power tools.
3. **Inverter**:
In inverter design, JCS7N65F can be used to convert DC power to AC power. Especially in solar inverter applications, it can efficiently process power and provide reliable performance.
4. **LED drive circuit**:
This device is suitable for use in LED lighting drive circuits. It can accurately control the working state of LEDs, improve brightness stability and energy efficiency, and is widely used in various lighting solutions.
In summary, JCS7N65F-OFNB-VB is an N-type MOSFET with superior performance, high voltage, good efficiency and reliability. It is suitable for a variety of high-voltage power electronics applications and is an important part of modern power management and switching circuit design.
1. **Switching Power Supply**:
JCS7N65F-OFNB-VB is very suitable for high-efficiency switching power supply design. It can handle drain-source voltage up to 650V, provide stable current output, and perform well in low power consumption state. It is widely used in power adapters and power conversion devices.
2. **Motor Control**:
This MOSFET can be used in motor drive circuits. As a switching device, it can realize the start-stop control and speed regulation of the motor, ensuring the efficient operation and stability of the motor. It is suitable for industrial automation and power tools.
3. **Inverter**:
In inverter design, JCS7N65F can be used to convert DC power to AC power. Especially in solar inverter applications, it can efficiently process power and provide reliable performance.
4. **LED drive circuit**:
This device is suitable for use in LED lighting drive circuits. It can accurately control the working state of LEDs, improve brightness stability and energy efficiency, and is widely used in various lighting solutions.
In summary, JCS7N65F-OFNB-VB is an N-type MOSFET with superior performance, high voltage, good efficiency and reliability. It is suitable for a variety of high-voltage power electronics applications and is an important part of modern power management and switching circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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