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JCS7N60F-R-F-N-B-VB Product details
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JCS7N60F-RFNB-VB Product Introduction
JCS7N60F-RFNB-VB is a high-performance single N-channel MOSFET in a TO220F package designed for high voltage applications. With a maximum drain-source voltage (VDS) of 650V, the device is capable of withstanding high voltage operation and is suitable for a wide range of power electronics applications. Its gate-source voltage (VGS) is rated at ±30V, with good stability and controllability. The threshold voltage (Vth) of this MOSFET is 3.5V, which allows it to turn on quickly and improve operating efficiency. The JCS7N60F-RFNB-VB has an on-resistance (RDS(ON)) of 1100mΩ at a VGS of 10V and a maximum drain current (ID) of 7A, making it suitable for scenarios requiring efficient power conversion. With its excellent electrical performance and reliability, this MOSFET is an ideal choice for applications such as power management and motor control.
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JCS7N60F-RFNB-VB is a high-performance single N-channel MOSFET in a TO220F package designed for high voltage applications. With a maximum drain-source voltage (VDS) of 650V, the device is capable of withstanding high voltage operation and is suitable for a wide range of power electronics applications. Its gate-source voltage (VGS) is rated at ±30V, with good stability and controllability. The threshold voltage (Vth) of this MOSFET is 3.5V, which allows it to turn on quickly and improve operating efficiency. The JCS7N60F-RFNB-VB has an on-resistance (RDS(ON)) of 1100mΩ at a VGS of 10V and a maximum drain current (ID) of 7A, making it suitable for scenarios requiring efficient power conversion. With its excellent electrical performance and reliability, this MOSFET is an ideal choice for applications such as power management and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: JCS7N60F-RFNB-VB
- **Package**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: Plannar
- **Maximum power dissipation (PD)**: 65W
- **Thermal resistance (RθJC)**: 5°C/W
- **Operating temperature range**: -55°C to 150°C
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- **Model**: JCS7N60F-RFNB-VB
- **Package**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: Plannar
- **Maximum power dissipation (PD)**: 65W
- **Thermal resistance (RθJC)**: 5°C/W
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications：
Applications and module descriptions
1. **Power converter**: JCS7N60F-RFNB-VB is widely used in switching power supplies (SMPS) and DC-DC converters. It can handle voltages up to 650V, ensuring efficient power management and is suitable for power modules in home appliances and industrial equipment.
2. **Motor control**: In motor drive systems, this MOSFET can be used as a high-voltage switch, suitable for the control of DC motors and stepper motors, and provides smooth start-up and operation by regulating current to meet industrial automation needs.
3. **Inverter**: This device is suitable for inverter design, especially in solar and wind energy systems, which can effectively convert DC power into AC power, support the use of renewable energy, and enhance the stability and efficiency of the system.
4. **LED drive circuit**: JCS7N60F-RFNB-VB is suitable for LED drive circuits. In high-voltage LED lighting applications, it provides stable current control to ensure high brightness and long life LED lighting solutions.
5. **Consumer Electronics**: In consumer electronics, this MOSFET can be used in power management modules such as chargers and adapters to help achieve efficient power conversion and management, meeting the requirements of modern electronic devices for miniaturization and high efficiency.
1. **Power converter**: JCS7N60F-RFNB-VB is widely used in switching power supplies (SMPS) and DC-DC converters. It can handle voltages up to 650V, ensuring efficient power management and is suitable for power modules in home appliances and industrial equipment.
2. **Motor control**: In motor drive systems, this MOSFET can be used as a high-voltage switch, suitable for the control of DC motors and stepper motors, and provides smooth start-up and operation by regulating current to meet industrial automation needs.
3. **Inverter**: This device is suitable for inverter design, especially in solar and wind energy systems, which can effectively convert DC power into AC power, support the use of renewable energy, and enhance the stability and efficiency of the system.
4. **LED drive circuit**: JCS7N60F-RFNB-VB is suitable for LED drive circuits. In high-voltage LED lighting applications, it provides stable current control to ensure high brightness and long life LED lighting solutions.
5. **Consumer Electronics**: In consumer electronics, this MOSFET can be used in power management modules such as chargers and adapters to help achieve efficient power conversion and management, meeting the requirements of modern electronic devices for miniaturization and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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