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JCS7N60FA-VB Product details
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Product Introduction
**JCS7N60FA-VB** is a high-voltage N-channel MOSFET in TO220F package, designed for high-voltage applications, capable of withstanding drain-source voltage (VDS) up to 650V and maximum gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, with good switching characteristics. The RDS(ON) of JCS7N60FA-VB is 1100mΩ, ensuring low conduction loss at high current, suitable for high-efficiency power management and power conversion applications.
**JCS7N60FA-VB** is a high-voltage N-channel MOSFET in TO220F package, designed for high-voltage applications, capable of withstanding drain-source voltage (VDS) up to 650V and maximum gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, with good switching characteristics. The RDS(ON) of JCS7N60FA-VB is 1100mΩ, ensuring low conduction loss at high current, suitable for high-efficiency power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: JCS7N60FA-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 1100mΩ (at VGS = 10V)
- **ID (drain current)**: 7A
- **Technology**: Planar technology
- **Model**: JCS7N60FA-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 1100mΩ (at VGS = 10V)
- **ID (drain current)**: 7A
- **Technology**: Planar technology
Domain and module applications：
Application fields and module examples
1. **High-voltage switching power supply**: JCS7N60FA-VB is particularly suitable for high-voltage switching power supply due to its high withstand voltage of 650V, which can efficiently manage and convert electrical energy and improve overall system efficiency.
2. **Motor driver**: This MOSFET is suitable for motor drive applications and can handle leakage currents up to 7A, making it very suitable for drive control of industrial motors and household appliances.
3. **LED lighting control**: JCS7N60FA-VB can be used in LED drive circuits. With its low RDS(ON) value, it can improve energy conversion efficiency and ensure high brightness and long life of LEDs.
4. **Automotive power management**: In automotive electronics, this MOSFET can be used in electric power steering and battery management systems to meet the power needs of automobiles with efficient and stable performance.
5. **Energy Conversion System**: Due to its excellent switching performance and high voltage capability, this MOSFET is suitable for various energy conversion devices such as inverters and chargers to achieve efficient energy transmission.
Through the application examples in these fields, it can be seen that the JCS7N60FA-VB is important in modern power management and high-efficiency circuit design, and can provide reliable solutions for a variety of applications.
1. **High-voltage switching power supply**: JCS7N60FA-VB is particularly suitable for high-voltage switching power supply due to its high withstand voltage of 650V, which can efficiently manage and convert electrical energy and improve overall system efficiency.
2. **Motor driver**: This MOSFET is suitable for motor drive applications and can handle leakage currents up to 7A, making it very suitable for drive control of industrial motors and household appliances.
3. **LED lighting control**: JCS7N60FA-VB can be used in LED drive circuits. With its low RDS(ON) value, it can improve energy conversion efficiency and ensure high brightness and long life of LEDs.
4. **Automotive power management**: In automotive electronics, this MOSFET can be used in electric power steering and battery management systems to meet the power needs of automobiles with efficient and stable performance.
5. **Energy Conversion System**: Due to its excellent switching performance and high voltage capability, this MOSFET is suitable for various energy conversion devices such as inverters and chargers to achieve efficient energy transmission.
Through the application examples in these fields, it can be seen that the JCS7N60FA-VB is important in modern power management and high-efficiency circuit design, and can provide reliable solutions for a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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