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JCS730V-VB Product details
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JCS730V-VB MOSFET Product Introduction
**JCS730V-VB** is a high voltage N-type MOSFET in TO-251 package, specially designed to withstand drain-source voltage up to 650V, suitable for various power electronics applications. Its maximum gate-source voltage (VGS) is ±30V, ensuring the safety and stability of the device under different operating conditions. The on-resistance (RDS(ON)) of the device is 950mΩ at VGS=10V, providing good efficiency and low power consumption characteristics. Using SJ_Multi-EPI technology, JCS730V-VB can maintain excellent performance in high temperature and high voltage environments, suitable for modern power management and switching circuits.
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**JCS730V-VB** is a high voltage N-type MOSFET in TO-251 package, specially designed to withstand drain-source voltage up to 650V, suitable for various power electronics applications. Its maximum gate-source voltage (VGS) is ±30V, ensuring the safety and stability of the device under different operating conditions. The on-resistance (RDS(ON)) of the device is 950mΩ at VGS=10V, providing good efficiency and low power consumption characteristics. Using SJ_Multi-EPI technology, JCS730V-VB can maintain excellent performance in high temperature and high voltage environments, suitable for modern power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO-251
- TO-251 package has good heat dissipation performance, suitable for medium to high power applications, easy installation and ensure effective heat dissipation.
2. **Configuration**: Single N-type channel
- Single channel design provides higher current conduction efficiency and is suitable for a variety of application scenarios.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand, suitable for high-voltage circuit applications, ensuring the reliability of the system.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source, ensuring the safety of the device under different working conditions.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, providing good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- Higher on-resistance may cause some energy loss in some low-power applications.
7. **Current rating (ID)**: 5A
- Maximum continuous current that the device can handle under normal operating conditions, suitable for lower load applications.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology ensures high performance and stability of the device under high voltage and high temperature environments, suitable for various power electronics applications.
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1. **Package**: TO-251
- TO-251 package has good heat dissipation performance, suitable for medium to high power applications, easy installation and ensure effective heat dissipation.
2. **Configuration**: Single N-type channel
- Single channel design provides higher current conduction efficiency and is suitable for a variety of application scenarios.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand, suitable for high-voltage circuit applications, ensuring the reliability of the system.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source, ensuring the safety of the device under different working conditions.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, providing good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- Higher on-resistance may cause some energy loss in some low-power applications.
7. **Current rating (ID)**: 5A
- Maximum continuous current that the device can handle under normal operating conditions, suitable for lower load applications.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology ensures high performance and stability of the device under high voltage and high temperature environments, suitable for various power electronics applications.
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Domain and module applications：
Application Examples
1. **Switching Power Supply**:
JCS730V-VB is very suitable for high-efficiency switching power supply design, can withstand high drain-source voltage, and provide stable current output under low power consumption state, and is widely used in power adapters and power conversion devices.
2. **Inverter**:
This MOSFET can be used in solar inverters to convert DC power into AC power, can efficiently process electric energy and ensure system reliability, and is suitable for the field of renewable energy.
3. **Motor Drive**:
In the motor control system, JCS730V-VB can be used as a switching device to achieve motor speed regulation and start-stop control, ensuring the efficiency and stability of motor operation.
4. **LED Drive Circuit**:
This device is suitable for LED lighting drive circuits, can efficiently control the working state of LEDs, provide the advantages of stable brightness and reduced power consumption, and is widely used in the lighting field.
In summary, JCS730V-VB is an N-type MOSFET with superior performance, high voltage, low power consumption and reliability. It is suitable for a variety of high voltage power electronics applications and is an important part of modern power management and switching circuit design.
1. **Switching Power Supply**:
JCS730V-VB is very suitable for high-efficiency switching power supply design, can withstand high drain-source voltage, and provide stable current output under low power consumption state, and is widely used in power adapters and power conversion devices.
2. **Inverter**:
This MOSFET can be used in solar inverters to convert DC power into AC power, can efficiently process electric energy and ensure system reliability, and is suitable for the field of renewable energy.
3. **Motor Drive**:
In the motor control system, JCS730V-VB can be used as a switching device to achieve motor speed regulation and start-stop control, ensuring the efficiency and stability of motor operation.
4. **LED Drive Circuit**:
This device is suitable for LED lighting drive circuits, can efficiently control the working state of LEDs, provide the advantages of stable brightness and reduced power consumption, and is widely used in the lighting field.
In summary, JCS730V-VB is an N-type MOSFET with superior performance, high voltage, low power consumption and reliability. It is suitable for a variety of high voltage power electronics applications and is an important part of modern power management and switching circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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