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JCS730R-O-R-N-A-VB Product details
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Product Introduction: JCS730R-ORNA-VB
JCS730R-ORNA-VB is a high-performance single N-channel power MOSFET in TO252 package, designed for high voltage applications. The device has a maximum drain-source voltage (VDS) of 650V and is suitable for various power management and switch control circuits. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 700mΩ at VGS of 10V, and the maximum drain current (ID) is 7A. Using SJ_Multi-EPI technology, the JCS730R provides excellent switching performance and high efficiency, making it excel in a variety of industrial and consumer electronics applications.
JCS730R-ORNA-VB is a high-performance single N-channel power MOSFET in TO252 package, designed for high voltage applications. The device has a maximum drain-source voltage (VDS) of 650V and is suitable for various power management and switch control circuits. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 700mΩ at VGS of 10V, and the maximum drain current (ID) is 7A. Using SJ_Multi-EPI technology, the JCS730R provides excellent switching performance and high efficiency, making it excel in a variety of industrial and consumer electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
1. **Package**: TO252
- TO252 package has a small size and good thermal management performance, suitable for high power and compact space applications.
2. **Configuration**: Single N-channel
- The single N-channel structure optimizes the conduction characteristics and is suitable for various power and switching applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage reaches 650V, suitable for applications in high voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range is ±30V, which enhances the flexibility and reliability of the device.
5. **Gate threshold voltage (Vth)**: 3.5V
- The gate threshold voltage is relatively low, which supports fast conduction and improves the response speed of the system.
6. **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- At 10V gate voltage, the on-resistance is low, which helps reduce power loss and improve overall energy efficiency.
7. **Drain current (ID)**: 7A
- The maximum continuous drain current is 7A, which is suitable for applications with medium current loads and ensures the reliability of the device under different conditions.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology enhances the performance of the device and enables stable operation under high voltage and high current conditions.
1. **Package**: TO252
- TO252 package has a small size and good thermal management performance, suitable for high power and compact space applications.
2. **Configuration**: Single N-channel
- The single N-channel structure optimizes the conduction characteristics and is suitable for various power and switching applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage reaches 650V, suitable for applications in high voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range is ±30V, which enhances the flexibility and reliability of the device.
5. **Gate threshold voltage (Vth)**: 3.5V
- The gate threshold voltage is relatively low, which supports fast conduction and improves the response speed of the system.
6. **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- At 10V gate voltage, the on-resistance is low, which helps reduce power loss and improve overall energy efficiency.
7. **Drain current (ID)**: 7A
- The maximum continuous drain current is 7A, which is suitable for applications with medium current loads and ensures the reliability of the device under different conditions.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology enhances the performance of the device and enables stable operation under high voltage and high current conditions.
Domain and module applications：
Applications and modules:
1. **Power converter**:
JCS730R-ORNA-VB is suitable for high-voltage DC-DC converters, which can efficiently convert input voltage to the required output voltage to meet various power management needs.
2. **Power tools**:
In power tools, this MOSFET can be used for motor drive and control, providing stable current output to ensure reliable performance of power tools when the load changes.
3. **Lighting system**:
This device can be used in LED lighting and other high-voltage lighting applications, as a switching element to provide efficient current control, ensuring the stability and energy efficiency of the lighting system.
4. **Industrial automation equipment**:
JCS730R is very suitable for power management systems in industrial automation equipment, which can work stably under high voltage conditions and support various control and monitoring functions.
Through its superior performance, JCS730R-ORNA-VB demonstrates great flexibility and reliability in a variety of power and control applications, meeting the needs of modern electrical equipment for high efficiency and high safety.
1. **Power converter**:
JCS730R-ORNA-VB is suitable for high-voltage DC-DC converters, which can efficiently convert input voltage to the required output voltage to meet various power management needs.
2. **Power tools**:
In power tools, this MOSFET can be used for motor drive and control, providing stable current output to ensure reliable performance of power tools when the load changes.
3. **Lighting system**:
This device can be used in LED lighting and other high-voltage lighting applications, as a switching element to provide efficient current control, ensuring the stability and energy efficiency of the lighting system.
4. **Industrial automation equipment**:
JCS730R is very suitable for power management systems in industrial automation equipment, which can work stably under high voltage conditions and support various control and monitoring functions.
Through its superior performance, JCS730R-ORNA-VB demonstrates great flexibility and reliability in a variety of power and control applications, meeting the needs of modern electrical equipment for high efficiency and high safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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