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JCS630FA-VB Product details
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JCS630FA-VB MOSFET Product Introduction
**JCS630FA-VB** is a high-performance N-type MOSFET in TO-220F package, designed for high voltage applications. The device has a maximum drain-source voltage (VDS) of 200V, suitable for various power management and switching circuits. The maximum gate-source voltage (VGS) is ±20V, ensuring stable operation of the device under safe conditions. The on-resistance (RDS(ON)) of JCS630FA-VB is 265mΩ at VGS=10V, providing good low-power performance. Using Trench technology, this MOSFET can still maintain good operating stability in high temperature environment, which is very suitable for modern power electronics applications.
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**JCS630FA-VB** is a high-performance N-type MOSFET in TO-220F package, designed for high voltage applications. The device has a maximum drain-source voltage (VDS) of 200V, suitable for various power management and switching circuits. The maximum gate-source voltage (VGS) is ±20V, ensuring stable operation of the device under safe conditions. The on-resistance (RDS(ON)) of JCS630FA-VB is 265mΩ at VGS=10V, providing good low-power performance. Using Trench technology, this MOSFET can still maintain good operating stability in high temperature environment, which is very suitable for modern power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | 265mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO-220F
- TO-220F package design provides good heat dissipation performance, suitable for medium to high power applications, easy installation and heat dissipation management.
2. **Configuration**: Single N-type channel
- Single channel configuration allows high flexibility and efficiency in circuit design.
3. **Drain-source voltage (VDS)**: 200V
- The maximum drain-source voltage that the device can withstand, suitable for high voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum allowable voltage between the gate and source, ensuring the safety and stability of the device.
5. **Threshold voltage (Vth)**: 3V
- The minimum gate voltage required for the device to start conducting, providing good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 265mΩ @ VGS = 10V
- The lower on-resistance enables high efficiency and low heat generation during operation.
7. **Current rating (ID)**: 10A
- The maximum continuous current that the device can handle under normal operating conditions, suitable for medium load applications.
8. **Technology**: Trench
- Trench technology provides excellent switching characteristics and low conduction losses, suitable for high-efficiency power electronics design.
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1. **Package**: TO-220F
- TO-220F package design provides good heat dissipation performance, suitable for medium to high power applications, easy installation and heat dissipation management.
2. **Configuration**: Single N-type channel
- Single channel configuration allows high flexibility and efficiency in circuit design.
3. **Drain-source voltage (VDS)**: 200V
- The maximum drain-source voltage that the device can withstand, suitable for high voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum allowable voltage between the gate and source, ensuring the safety and stability of the device.
5. **Threshold voltage (Vth)**: 3V
- The minimum gate voltage required for the device to start conducting, providing good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 265mΩ @ VGS = 10V
- The lower on-resistance enables high efficiency and low heat generation during operation.
7. **Current rating (ID)**: 10A
- The maximum continuous current that the device can handle under normal operating conditions, suitable for medium load applications.
8. **Technology**: Trench
- Trench technology provides excellent switching characteristics and low conduction losses, suitable for high-efficiency power electronics design.
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Domain and module applications：
Application Examples
1. **Power Converter**:
JCS630FA-VB is very suitable for high-efficiency power converters and switching power supplies, which can effectively reduce power consumption and improve energy conversion efficiency. It is suitable for industrial power supplies and consumer electronics.
2. **Power Tools**:
This MOSFET can be used in the motor drive control of power tools to ensure stable current and power during startup and operation, and improve the performance and durability of the tools.
3. **Automotive Electronics**:
In the power management and motor control systems of automobiles, JCS630FA-VB can provide reliable current regulation to ensure the efficient operation of electric vehicles and hybrid vehicles.
4. **LED Driver**:
This device is suitable for the driver circuit of LED lighting. Its low on-resistance characteristics can effectively improve the brightness and stability of LEDs, making it widely used in commercial and residential lighting.
In summary, JCS630FA-VB is an N-type MOSFET suitable for a variety of high-voltage power electronic applications. With its high performance, low power consumption and reliability, it has become an indispensable component in modern electronic design.
1. **Power Converter**:
JCS630FA-VB is very suitable for high-efficiency power converters and switching power supplies, which can effectively reduce power consumption and improve energy conversion efficiency. It is suitable for industrial power supplies and consumer electronics.
2. **Power Tools**:
This MOSFET can be used in the motor drive control of power tools to ensure stable current and power during startup and operation, and improve the performance and durability of the tools.
3. **Automotive Electronics**:
In the power management and motor control systems of automobiles, JCS630FA-VB can provide reliable current regulation to ensure the efficient operation of electric vehicles and hybrid vehicles.
4. **LED Driver**:
This device is suitable for the driver circuit of LED lighting. Its low on-resistance characteristics can effectively improve the brightness and stability of LEDs, making it widely used in commercial and residential lighting.
In summary, JCS630FA-VB is an N-type MOSFET suitable for a variety of high-voltage power electronic applications. With its high performance, low power consumption and reliability, it has become an indispensable component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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