中文
English
JCS5N60VB-O-V-N-B-VB Product details
Back to previous pageProduct introduction：
JCS5N60VB-OVNB-VB Product Introduction
JCS5N60VB-OVNB-VB is a high voltage single N-channel MOSFET in TO251 package, designed for high voltage and medium power applications. The maximum drain-source voltage (VDS) of this device can reach 650V, which is suitable for high voltage power management applications. Its gate-source voltage (VGS) is rated at ±30V, ensuring reliability under various operating conditions. The threshold voltage (Vth) is 3.5V, ensuring fast turn-on at low gate voltage. The on-resistance (RDS(ON)) of JCS5N60VB-OVNB-VB is 950mΩ at VGS of 10V, with low conduction loss and a maximum drain current (ID) of 5A. The use of SJ_Multi-EPI technology makes this MOSFET have good thermal management performance and is suitable for a variety of high voltage power supplies and switch control applications.
---
JCS5N60VB-OVNB-VB is a high voltage single N-channel MOSFET in TO251 package, designed for high voltage and medium power applications. The maximum drain-source voltage (VDS) of this device can reach 650V, which is suitable for high voltage power management applications. Its gate-source voltage (VGS) is rated at ±30V, ensuring reliability under various operating conditions. The threshold voltage (Vth) is 3.5V, ensuring fast turn-on at low gate voltage. The on-resistance (RDS(ON)) of JCS5N60VB-OVNB-VB is 950mΩ at VGS of 10V, with low conduction loss and a maximum drain current (ID) of 5A. The use of SJ_Multi-EPI technology makes this MOSFET have good thermal management performance and is suitable for a variety of high voltage power supplies and switch control applications.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: JCS5N60VB-OVNB-VB
- **Package**: TO251
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
- **Maximum power dissipation (PD)**: 50W
- **Thermal resistance (RθJC)**: 4°C/W
- **Operating temperature range**: -55°C to 150°C
---
- **Model**: JCS5N60VB-OVNB-VB
- **Package**: TO251
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
- **Maximum power dissipation (PD)**: 50W
- **Thermal resistance (RθJC)**: 4°C/W
- **Operating temperature range**: -55°C to 150°C
---
Domain and module applications：
Application fields and module description
1. **Power conversion**: JCS5N60VB-OVNB-VB is suitable for high-voltage switching power supplies (SMPS) and DC-DC converters, and can handle voltages up to 650V, ensuring efficient and stable energy conversion in power management.
2. **Motor control**: In motor drive circuits, this MOSFET can be used as a switching element, suitable for start-stop control of high-voltage motors, especially in medium-power motor applications, providing reliable control capabilities.
3. **Industrial automation**: This device is suitable for various industrial automation equipment, such as factory automation control systems and intelligent manufacturing equipment. It can operate stably under high-voltage environments and provide support for equipment control.
4. **LED drive circuit**: JCS5N60VB-OVNB-VB is suitable for high-voltage LED drive circuits. As a switching element, it can effectively control the current of LEDs and is widely used in the lighting field.
5. **Inverter**: This MOSFET can provide high voltage and medium current support in inverter applications. It is suitable for renewable energy systems (such as solar inverters) to ensure efficient energy conversion and stable operation of the system.
1. **Power conversion**: JCS5N60VB-OVNB-VB is suitable for high-voltage switching power supplies (SMPS) and DC-DC converters, and can handle voltages up to 650V, ensuring efficient and stable energy conversion in power management.
2. **Motor control**: In motor drive circuits, this MOSFET can be used as a switching element, suitable for start-stop control of high-voltage motors, especially in medium-power motor applications, providing reliable control capabilities.
3. **Industrial automation**: This device is suitable for various industrial automation equipment, such as factory automation control systems and intelligent manufacturing equipment. It can operate stably under high-voltage environments and provide support for equipment control.
4. **LED drive circuit**: JCS5N60VB-OVNB-VB is suitable for high-voltage LED drive circuits. As a switching element, it can effectively control the current of LEDs and is widely used in the lighting field.
5. **Inverter**: This MOSFET can provide high voltage and medium current support in inverter applications. It is suitable for renewable energy systems (such as solar inverters) to ensure efficient energy conversion and stable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
