JCS5N50VT-O-V-N-B-VB Product details
Product introduction:
JCS5N50VT-OVNB-VB is a high voltage single N-channel MOSFET in TO251 package, designed for high voltage and medium power applications. The device has a maximum drain-source voltage of 650V and a maximum drain current of 5A. It uses advanced SJ_Multi-EPI technology to ensure its high efficiency performance in high voltage environments. Its on-resistance is 950mΩ@VGS=10V, which can provide reliable solutions in a variety of power electronics applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
1. **Package type**: TO251
This package has good heat dissipation performance and is suitable for high voltage and medium power applications.
2. **Channel type**: Single N-channel
Designed for power switches, it can effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 650V
High voltage capability makes it suitable for a variety of power management systems.
4. **Gate drive voltage (VGS)**: ±30V
Provides flexible gate drive options and is compatible with a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
The moderate threshold voltage ensures that the device can be turned on quickly, enhancing design flexibility.
6. **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
Lower on-resistance helps reduce energy loss and improve efficiency.
7. **Maximum drain current (ID)**: 5A
Able to withstand medium current load, suitable for a variety of power applications.
8. **Technology type**: SJ_Multi-EPI
Advanced technology improves device performance and reliability.
Domain and module applications:
1. **High-voltage switching power supply**
JCS5N50VT-OVNB-VB is widely used in high-voltage switching power supplies, which can effectively control the current flow and ensure the stability of the power supply under high voltage conditions. It is suitable for industrial power supplies and power adapters.
2. **Motor control**
In motor drive applications, this device can be used as a switching element to control the start and stop of low-power motors, which is suitable for home appliances and small motor drive systems.
3. **Power management system**
JCS5N50VT-OVNB-VB can play an important role in power management modules, which is suitable for battery management and high-voltage power distribution systems to achieve efficient power control.
4. **Consumer electronic devices**
This MOSFET can be used in some consumer electronic devices, such as home appliance control boards and uninterruptible power supplies (UPS), to provide reliable power switching solutions under high-voltage operation.
With its high voltage capability and medium current carrying capacity, the JCS5N50VT-OVNB-VB is competitive in specific applications and suitable for multiple industrial and consumer electronics fields.
Technical support:
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