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JCS5N50RT-O-R-N-B-VB Product details
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1. JCS5N50RT-ORNB-VB Product Introduction
JCS5N50RT-ORNB-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) can reach 650V, the maximum drain current (ID) is 5A, the threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 1000mΩ (@VGS=10V). With its SJ_Multi-EPI technology, JCS5N50RT-ORNB-VB provides superior thermal performance and reliability, suitable for the design of a variety of power electronic equipment.
JCS5N50RT-ORNB-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) can reach 650V, the maximum drain current (ID) is 5A, the threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 1000mΩ (@VGS=10V). With its SJ_Multi-EPI technology, JCS5N50RT-ORNB-VB provides superior thermal performance and reliability, suitable for the design of a variety of power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. JCS5N50RT-ORNB-VB Detailed parameter description
- **Model**: JCS5N50RT-ORNB-VB
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: The specific power consumption depends on the actual application circuit design
- **Switching speed**: Suitable for general switching applications
- **Voltage resistance**: High voltage resistance, suitable for high voltage circuit design
- **Model**: JCS5N50RT-ORNB-VB
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: The specific power consumption depends on the actual application circuit design
- **Switching speed**: Suitable for general switching applications
- **Voltage resistance**: High voltage resistance, suitable for high voltage circuit design
Domain and module applications：
III. Application fields and module examples of JCS5N50RT-ORNB-VB
1. **High-voltage power converter**
JCS5N50RT-ORNB-VB is widely used in high-voltage DC-DC converters and AC-DC power modules, capable of handling high voltages of 650V, ensuring efficient power conversion processes and stable output.
2. **Motor control**
This MOSFET performs well in motor drive systems and is suitable for fields such as industrial automation and electric vehicles. Its high current carrying capacity and excellent switching performance enable it to efficiently control the start-up and operation of motors.
3. **Lighting system**
JCS5N50RT-ORNB-VB is suitable for high-voltage lighting applications such as LED lighting and xenon lamps, and can work stably in high-voltage environments, ensuring the efficiency and long life of lighting equipment.
4. **Power Amplifier**
This device can also be used in high-voltage power amplifiers to meet the needs of signal amplification in communication and broadcasting equipment, and is suitable for a variety of high-power and high-voltage applications.
In short, the JCS5N50RT-ORNB-VB is an efficient and reliable N-channel MOSFET suitable for a variety of high-voltage power electronics applications, providing excellent performance and stability for modern power supply designs.
1. **High-voltage power converter**
JCS5N50RT-ORNB-VB is widely used in high-voltage DC-DC converters and AC-DC power modules, capable of handling high voltages of 650V, ensuring efficient power conversion processes and stable output.
2. **Motor control**
This MOSFET performs well in motor drive systems and is suitable for fields such as industrial automation and electric vehicles. Its high current carrying capacity and excellent switching performance enable it to efficiently control the start-up and operation of motors.
3. **Lighting system**
JCS5N50RT-ORNB-VB is suitable for high-voltage lighting applications such as LED lighting and xenon lamps, and can work stably in high-voltage environments, ensuring the efficiency and long life of lighting equipment.
4. **Power Amplifier**
This device can also be used in high-voltage power amplifiers to meet the needs of signal amplification in communication and broadcasting equipment, and is suitable for a variety of high-power and high-voltage applications.
In short, the JCS5N50RT-ORNB-VB is an efficient and reliable N-channel MOSFET suitable for a variety of high-voltage power electronics applications, providing excellent performance and stability for modern power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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