JCS4N60F-O-F-N-B-VB Product details
Product introduction:
JCS4N60F-OFNB-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage and medium power applications. The device has a maximum drain-source voltage of 650V and a maximum drain current of 4A. It uses Plannar technology to ensure stability and reliability in high voltage environments. Its on-resistance is 2560mΩ@VGS=10V, which is suitable for a variety of power electronics applications, especially in situations where high voltage is required.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
1. **Package type**: TO220F
Provides good heat dissipation performance, suitable for high voltage and medium power applications.
2. **Channel type**: Single N-channel
Designed for power switches, it can effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 650V
High voltage capability is suitable for various power management systems.
4. **Gate drive voltage (VGS)**: ±30V
Provides flexible gate drive options, compatible with a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
Moderate threshold voltage ensures that the device can be turned on quickly, enhancing design flexibility.
6. **On-resistance (RDS(ON))**: 2560mΩ @ VGS = 10V
The relatively high on-resistance may cause some energy loss, but it is still acceptable in suitable applications.
7. **Maximum drain current (ID)**: 4A
Able to withstand medium current loads, suitable for a variety of power applications.
8. **Technology type**: Plannar
Reliable switching characteristics make it suitable for use under high voltage conditions.
Domain and module applications:
1. **High-voltage switching power supply**
JCS4N60F-OFNB-VB can be widely used in high-voltage switching power supplies, which can effectively control the current and ensure the stability of the power supply in a high-voltage environment. It is suitable for industrial power supplies and power adapters.
2. **Motor control**
In motor control applications, the device can be used as a switching element for starting and stopping low-power motors, which is suitable for home appliances and small motor drive systems.
3. **Power management system**
JCS4N60F-OFNB-VB can play an important role in power management modules, suitable for battery management and power distribution systems, and help achieve efficient power control.
4. **Consumer electronic devices**
This MOSFET can be used in consumer electronic devices such as home appliance control boards and uninterruptible power supplies (UPS) to provide reliable power switching solutions under high-voltage operation.
Although the JCS4N60F-OFNB-VB has a higher on-resistance, its high voltage capability and medium current carrying capacity make it still competitive in specific applications and suitable for multiple industrial and consumer electronics fields.
Technical support:
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