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JCS4N60F-O-F-N-B-VB Product details

Product introduction:

1. JCS4N60F-OFNB-VB Product Introduction

JCS4N60F-OFNB-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage and medium power applications. The device has a maximum drain-source voltage of 650V and a maximum drain current of 4A. It uses Plannar technology to ensure stability and reliability in high voltage environments. Its on-resistance is 2560mΩ@VGS=10V, which is suitable for a variety of power electronics applications, especially in situations where high voltage is required.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 4A 2560mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 4A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 4A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
II. Detailed parameter description of JCS4N60F-OFNB-VB

1. **Package type**: TO220F
Provides good heat dissipation performance, suitable for high voltage and medium power applications.

2. **Channel type**: Single N-channel
Designed for power switches, it can effectively control the flow of current.

3. **Drain-source voltage (VDS)**: 650V
High voltage capability is suitable for various power management systems.

4. **Gate drive voltage (VGS)**: ±30V
Provides flexible gate drive options, compatible with a variety of circuit designs.

5. **Threshold voltage (Vth)**: 3.5V
Moderate threshold voltage ensures that the device can be turned on quickly, enhancing design flexibility.

6. **On-resistance (RDS(ON))**: 2560mΩ @ VGS = 10V
The relatively high on-resistance may cause some energy loss, but it is still acceptable in suitable applications.

7. **Maximum drain current (ID)**: 4A
Able to withstand medium current loads, suitable for a variety of power applications.

8. **Technology type**: Plannar
Reliable switching characteristics make it suitable for use under high voltage conditions.

Domain and module applications:

3. Application fields and module examples of JCS4N60F-OFNB-VB

1. **High-voltage switching power supply**
JCS4N60F-OFNB-VB can be widely used in high-voltage switching power supplies, which can effectively control the current and ensure the stability of the power supply in a high-voltage environment. It is suitable for industrial power supplies and power adapters.

2. **Motor control**
In motor control applications, the device can be used as a switching element for starting and stopping low-power motors, which is suitable for home appliances and small motor drive systems.

3. **Power management system**
JCS4N60F-OFNB-VB can play an important role in power management modules, suitable for battery management and power distribution systems, and help achieve efficient power control.

4. **Consumer electronic devices**
This MOSFET can be used in consumer electronic devices such as home appliance control boards and uninterruptible power supplies (UPS) to provide reliable power switching solutions under high-voltage operation.

Although the JCS4N60F-OFNB-VB has a higher on-resistance, its high voltage capability and medium current carrying capacity make it still competitive in specific applications and suitable for multiple industrial and consumer electronics fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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