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JCS4N60FA-O-F-N-B-VB Product details
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JCS4N60FA-OFNB-VB MOSFET Product Introduction
**JCS4N60FA-OFNB-VB** is a high-voltage N-type MOSFET in TO-220F package, designed for high-voltage applications. The device has a maximum drain-source voltage (VDS) of 650V, suitable for high-voltage power management and switching circuits. The maximum gate-source voltage (VGS) is ±30V, ensuring a safe and stable working environment. The on-resistance (RDS(ON)) of JCS4N60FA-OFNB-VB is 2560mΩ @ VGS=10V, which can effectively reduce power consumption under certain loads. Using planar technology, this MOSFET maintains good stability in high temperature and high voltage environments, and is widely used in modern power electronic equipment.
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**JCS4N60FA-OFNB-VB** is a high-voltage N-type MOSFET in TO-220F package, designed for high-voltage applications. The device has a maximum drain-source voltage (VDS) of 650V, suitable for high-voltage power management and switching circuits. The maximum gate-source voltage (VGS) is ±30V, ensuring a safe and stable working environment. The on-resistance (RDS(ON)) of JCS4N60FA-OFNB-VB is 2560mΩ @ VGS=10V, which can effectively reduce power consumption under certain loads. Using planar technology, this MOSFET maintains good stability in high temperature and high voltage environments, and is widely used in modern power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO-220F
- TO-220F package provides excellent heat dissipation, suitable for medium power applications, and easy installation.
2. **Configuration**: Single N-type channel
- This configuration enables the device to effectively control current and is suitable for a variety of circuit designs.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand, suitable for high-voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source, ensuring safe and stable operation of the device.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, ensuring good switching performance.
6. **On-resistance (RDS(ON))**:
- 2560mΩ @ VGS = 10V
- Lower on-resistance enables higher efficiency at a specific load.
7. **Current rating (ID)**: 4A
- The maximum continuous current the device can handle under normal operating conditions, suitable for medium load applications.
8. **Technology**: Plannar
- Planar technology ensures stability and reliability of the device under high temperature and high voltage conditions.
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1. **Package**: TO-220F
- TO-220F package provides excellent heat dissipation, suitable for medium power applications, and easy installation.
2. **Configuration**: Single N-type channel
- This configuration enables the device to effectively control current and is suitable for a variety of circuit designs.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand, suitable for high-voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source, ensuring safe and stable operation of the device.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, ensuring good switching performance.
6. **On-resistance (RDS(ON))**:
- 2560mΩ @ VGS = 10V
- Lower on-resistance enables higher efficiency at a specific load.
7. **Current rating (ID)**: 4A
- The maximum continuous current the device can handle under normal operating conditions, suitable for medium load applications.
8. **Technology**: Plannar
- Planar technology ensures stability and reliability of the device under high temperature and high voltage conditions.
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Domain and module applications：
Application Examples
1. **Power Management System**:
JCS4N60FA-OFNB-VB is suitable for high voltage power management systems such as switching power supplies and DC-DC converters. Its high withstand voltage characteristics can maintain high efficiency during power conversion.
2. **Motor Control**:
This MOSFET is also widely used in motor control applications. It can handle load switching in motor drives and effectively control motor start and stop.
3. **Industrial Equipment**:
In industrial automation systems, JCS4N60FA-OFNB-VB can be used for sensor interfaces and signal conditioning circuits to achieve reliable data acquisition and control.
4. **LED Drive Circuit**:
This device is suitable for LED drive circuits. It can work stably under high voltage input conditions to ensure the normal light emission of LEDs and extend their service life.
In summary, JCS4N60FA-OFNB-VB is a high-voltage N-type MOSFET, which is widely used in power management, motor control and industrial equipment. It has become an important part of modern power electronics design with its reliability and stability.
1. **Power Management System**:
JCS4N60FA-OFNB-VB is suitable for high voltage power management systems such as switching power supplies and DC-DC converters. Its high withstand voltage characteristics can maintain high efficiency during power conversion.
2. **Motor Control**:
This MOSFET is also widely used in motor control applications. It can handle load switching in motor drives and effectively control motor start and stop.
3. **Industrial Equipment**:
In industrial automation systems, JCS4N60FA-OFNB-VB can be used for sensor interfaces and signal conditioning circuits to achieve reliable data acquisition and control.
4. **LED Drive Circuit**:
This device is suitable for LED drive circuits. It can work stably under high voltage input conditions to ensure the normal light emission of LEDs and extend their service life.
In summary, JCS4N60FA-OFNB-VB is a high-voltage N-type MOSFET, which is widely used in power management, motor control and industrial equipment. It has become an important part of modern power electronics design with its reliability and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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