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JCS2N65FB-VB Product details
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JCS2N65FB-VB MOSFET Product Introduction
JCS2N65FB-VB is a high voltage N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its drain-source voltage (VDS) can be as high as 650V, and the gate-source voltage (VGS) is rated at ±30V, which is suitable for a variety of power electronics applications. The threshold voltage (Vth) of this MOSFET is 3.5V, the on-resistance (RDS(ON)) is 1700mΩ when VGS=10V, and the maximum leakage current (ID) can reach 2A, which is suitable for handling occasions that require high voltage but low current. The use of planar technology (Plannar) ensures its reliability and stability in high voltage environments.
JCS2N65FB-VB is a high voltage N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its drain-source voltage (VDS) can be as high as 650V, and the gate-source voltage (VGS) is rated at ±30V, which is suitable for a variety of power electronics applications. The threshold voltage (Vth) of this MOSFET is 3.5V, the on-resistance (RDS(ON)) is 1700mΩ when VGS=10V, and the maximum leakage current (ID) can reach 2A, which is suitable for handling occasions that require high voltage but low current. The use of planar technology (Plannar) ensures its reliability and stability in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 1700mΩ @ VGS = 10V
- **ID (leakage current)**: 2A
- **Technology**: Planar technology
- **Power dissipation (Pd)**: Suitable for high power applications, requires reasonable heat dissipation design
- **Operating temperature range**: -55°C to 150°C (Tj max)
- **Gate charge (Qg)**: Provides moderate gate charge characteristics, suitable for switching applications.
- **Package**: TO220F
- **Configuration**: Single N channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 1700mΩ @ VGS = 10V
- **ID (leakage current)**: 2A
- **Technology**: Planar technology
- **Power dissipation (Pd)**: Suitable for high power applications, requires reasonable heat dissipation design
- **Operating temperature range**: -55°C to 150°C (Tj max)
- **Gate charge (Qg)**: Provides moderate gate charge characteristics, suitable for switching applications.
Domain and module applications：
Applications and modules
JCS2N65FB-VB MOSFET has a wide range of applications in many fields, mainly including:
1. **High-voltage switching power supply**: Due to its drain-source voltage of up to 650V, JCS2N65FB-VB is very suitable for the design of high-voltage switching power supplies and DC-DC converters. It can effectively control the switching state of the power supply, maintain high efficiency, and is suitable for various power conversion modules.
2. **Motor control**: Despite its low leakage current, JCS2N65FB-VB can be used for some low-power motor drive applications, especially in situations where high voltage is required, such as household appliances and small power tools.
3. **Lighting solutions**: This MOSFET can be used for high-voltage LED driving and intelligent lighting control systems. Its high voltage capability and stability make it a key component in high-efficiency lighting solutions to ensure system reliability.
4. **Load switch application**: JCS2N65FB-VB can be used as a switch for various loads and can efficiently control medium power loads. This has a wide range of application potentials in industrial control, communication equipment and automotive electronics.
The high withstand voltage characteristics and reliability of JCS2N65FB-VB MOSFET make it an ideal choice in high-voltage power electronics applications to meet a variety of power management needs.
JCS2N65FB-VB MOSFET has a wide range of applications in many fields, mainly including:
1. **High-voltage switching power supply**: Due to its drain-source voltage of up to 650V, JCS2N65FB-VB is very suitable for the design of high-voltage switching power supplies and DC-DC converters. It can effectively control the switching state of the power supply, maintain high efficiency, and is suitable for various power conversion modules.
2. **Motor control**: Despite its low leakage current, JCS2N65FB-VB can be used for some low-power motor drive applications, especially in situations where high voltage is required, such as household appliances and small power tools.
3. **Lighting solutions**: This MOSFET can be used for high-voltage LED driving and intelligent lighting control systems. Its high voltage capability and stability make it a key component in high-efficiency lighting solutions to ensure system reliability.
4. **Load switch application**: JCS2N65FB-VB can be used as a switch for various loads and can efficiently control medium power loads. This has a wide range of application potentials in industrial control, communication equipment and automotive electronics.
The high withstand voltage characteristics and reliability of JCS2N65FB-VB MOSFET make it an ideal choice in high-voltage power electronics applications to meet a variety of power management needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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