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JCS2N60V-R-V-N-B-VB Product details
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JCS2N60V-RVNB-VB MOSFET Product Introduction
**JCS2N60V-RVNB-VB** is a high-voltage N-type MOSFET in TO-251 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V, which can meet the demand for high voltage resistance and is suitable for power management and switching circuits. The maximum gate-source voltage (VGS) of the device is ±30V, ensuring operation under safe and stable operating conditions. The on-resistance (RDS(ON)) is 4300mΩ @ VGS=10V, which is suitable for low power and low current applications. Using planar technology, JCS2N60V performs stably in high temperature environments and is an important component of power electronic equipment.
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**JCS2N60V-RVNB-VB** is a high-voltage N-type MOSFET in TO-251 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V, which can meet the demand for high voltage resistance and is suitable for power management and switching circuits. The maximum gate-source voltage (VGS) of the device is ±30V, ensuring operation under safe and stable operating conditions. The on-resistance (RDS(ON)) is 4300mΩ @ VGS=10V, which is suitable for low power and low current applications. Using planar technology, JCS2N60V performs stably in high temperature environments and is an important component of power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO-251
- The TO-251 package provides good heat dissipation, easy installation, and is suitable for medium and low power applications.
2. **Configuration**: Single N-type channel
- The N-type MOSFET design can effectively control the flow of current and is suitable for a variety of circuit configurations.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand, suitable for use in high-voltage circuits.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and source, ensuring safe and stable operating conditions.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, providing good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS = 10V
- Suitable for low current or low power applications, performs well under light load despite higher on-resistance.
7. **Current rating (ID)**: 2A
- Maximum continuous current the device can handle under normal conditions, suitable for light load applications.
8. **Technology**: Plannar
- Planar technology ensures stability and reliability of the device under high voltage and temperature conditions.
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1. **Package**: TO-251
- The TO-251 package provides good heat dissipation, easy installation, and is suitable for medium and low power applications.
2. **Configuration**: Single N-type channel
- The N-type MOSFET design can effectively control the flow of current and is suitable for a variety of circuit configurations.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand, suitable for use in high-voltage circuits.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and source, ensuring safe and stable operating conditions.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, providing good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS = 10V
- Suitable for low current or low power applications, performs well under light load despite higher on-resistance.
7. **Current rating (ID)**: 2A
- Maximum continuous current the device can handle under normal conditions, suitable for light load applications.
8. **Technology**: Plannar
- Planar technology ensures stability and reliability of the device under high voltage and temperature conditions.
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Domain and module applications：
Application Examples
1. **Power Management System**:
The JCS2N60V-RVNB-VB is suitable for high voltage power management systems such as switching power supplies and DC-DC converters. Despite its high on-resistance, it can achieve good energy efficiency in low current applications and is suitable for applications with high power stability requirements.
2. **Consumer Electronics**:
This MOSFET can be used for load switches in consumer electronic devices such as home appliances and portable devices. Its high withstand voltage characteristics ensure that the equipment operates safely in high voltage environments and improves overall reliability.
3. **Industrial Control Circuits**:
The JCS2N60V-RVNB-VB is widely used in industrial automation and control circuits, especially in situations where high withstand voltage but low current demand is required, such as sensor interfaces and signal conditioning circuits.
4. **LED Drive Circuit**:
This device can be used in LED drive circuits, especially in high voltage applications. Its stability and reliability ensure the normal operation of LED and extend its service life.
In summary, JCS2N60V-RVNB-VB is an N-type MOSFET suitable for high voltage and low power consumption applications. It is widely used in power management, consumer electronics and industrial control fields, and is an important component of modern power electronics design.
1. **Power Management System**:
The JCS2N60V-RVNB-VB is suitable for high voltage power management systems such as switching power supplies and DC-DC converters. Despite its high on-resistance, it can achieve good energy efficiency in low current applications and is suitable for applications with high power stability requirements.
2. **Consumer Electronics**:
This MOSFET can be used for load switches in consumer electronic devices such as home appliances and portable devices. Its high withstand voltage characteristics ensure that the equipment operates safely in high voltage environments and improves overall reliability.
3. **Industrial Control Circuits**:
The JCS2N60V-RVNB-VB is widely used in industrial automation and control circuits, especially in situations where high withstand voltage but low current demand is required, such as sensor interfaces and signal conditioning circuits.
4. **LED Drive Circuit**:
This device can be used in LED drive circuits, especially in high voltage applications. Its stability and reliability ensure the normal operation of LED and extend its service life.
In summary, JCS2N60V-RVNB-VB is an N-type MOSFET suitable for high voltage and low power consumption applications. It is widely used in power management, consumer electronics and industrial control fields, and is an important component of modern power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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