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JCS2N60V-O-V-N-B-VB Product details
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Product Introduction: JCS2N60V-OVNB-VB
JCS2N60V-OVNB-VB is a high-efficiency single N-channel power MOSFET in TO251 package, designed for medium voltage and low current applications. Its maximum drain-source voltage (VDS) is 650V, suitable for switching and control circuits under high voltage conditions. The device has a gate threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 4300mΩ at a gate voltage of 10V, and supports a drain current (ID) of up to 2A. Using planar technology, JCS2N60V-OVNB-VB excels in high efficiency and reliability, and is suitable for a variety of power management and switching applications.
JCS2N60V-OVNB-VB is a high-efficiency single N-channel power MOSFET in TO251 package, designed for medium voltage and low current applications. Its maximum drain-source voltage (VDS) is 650V, suitable for switching and control circuits under high voltage conditions. The device has a gate threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 4300mΩ at a gate voltage of 10V, and supports a drain current (ID) of up to 2A. Using planar technology, JCS2N60V-OVNB-VB excels in high efficiency and reliability, and is suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description:
1. **Package**: TO251
- TO251 package has good heat dissipation performance and compact layout, suitable for PCB design of various electronic devices, and can effectively manage heat during high-power operation.
2. **Configuration**: Single N-channel
- The single N-channel structure provides excellent conduction characteristics and is suitable for a variety of power control and switching applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which can meet the needs of high-voltage environments and ensure the safety and stability of the equipment.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range is ±30V, ensuring the safety and reliability of the device under different working conditions.
5. **Gate Threshold Voltage (Vth)**: 3.5V
- The higher gate threshold voltage enables the MOSFET to conduct efficiently at an appropriate gate voltage and has good switching performance.
6. **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- The higher on-resistance is suitable for low-power applications. Although it will increase power loss, it can still remain effective in reasonable application scenarios.
7. **Drain Current (ID)**: 2A
- The maximum continuous drain current is 2A, which is suitable for the needs of low current loads and ensures the stability of the device in daily use.
8. **Technology**: Plannar
- Designed using planar technology, it provides better current handling capability and switching characteristics, suitable for use in a variety of power management applications.
1. **Package**: TO251
- TO251 package has good heat dissipation performance and compact layout, suitable for PCB design of various electronic devices, and can effectively manage heat during high-power operation.
2. **Configuration**: Single N-channel
- The single N-channel structure provides excellent conduction characteristics and is suitable for a variety of power control and switching applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which can meet the needs of high-voltage environments and ensure the safety and stability of the equipment.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range is ±30V, ensuring the safety and reliability of the device under different working conditions.
5. **Gate Threshold Voltage (Vth)**: 3.5V
- The higher gate threshold voltage enables the MOSFET to conduct efficiently at an appropriate gate voltage and has good switching performance.
6. **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- The higher on-resistance is suitable for low-power applications. Although it will increase power loss, it can still remain effective in reasonable application scenarios.
7. **Drain Current (ID)**: 2A
- The maximum continuous drain current is 2A, which is suitable for the needs of low current loads and ensures the stability of the device in daily use.
8. **Technology**: Plannar
- Designed using planar technology, it provides better current handling capability and switching characteristics, suitable for use in a variety of power management applications.
Domain and module applications：
Application fields and modules:
1. **Small power adapter**:
JCS2N60V-OVNB-VB is suitable for small power adapters, which can effectively convert power under high voltage conditions, suitable for low-power electronic devices, and ensure stable power output.
2. **Motor drive**:
This MOSFET can be used in the drive circuit of low-power motors, such as fans or pumps in small household appliances, to provide stable current control to meet daily use needs.
3. **Lighting control**:
In LED drive applications, JCS2N60V-OVNB-VB can be used as a switching device to control the switching state and brightness of LEDs, which is suitable for home lighting and decorative lamps.
4. **Household appliance control circuit**:
This MOSFET is suitable for control circuits in household appliances, such as electric kettles, microwave ovens, etc., and can provide reliable switching functions under high voltage conditions to ensure stable operation of the equipment.
With its good performance and wide application range, JCS2N60V-OVNB-VB provides an effective solution for power management of modern low-power electronic devices, meeting the needs of high efficiency and high reliability.
1. **Small power adapter**:
JCS2N60V-OVNB-VB is suitable for small power adapters, which can effectively convert power under high voltage conditions, suitable for low-power electronic devices, and ensure stable power output.
2. **Motor drive**:
This MOSFET can be used in the drive circuit of low-power motors, such as fans or pumps in small household appliances, to provide stable current control to meet daily use needs.
3. **Lighting control**:
In LED drive applications, JCS2N60V-OVNB-VB can be used as a switching device to control the switching state and brightness of LEDs, which is suitable for home lighting and decorative lamps.
4. **Household appliance control circuit**:
This MOSFET is suitable for control circuits in household appliances, such as electric kettles, microwave ovens, etc., and can provide reliable switching functions under high voltage conditions to ensure stable operation of the equipment.
With its good performance and wide application range, JCS2N60V-OVNB-VB provides an effective solution for power management of modern low-power electronic devices, meeting the needs of high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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