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JCS2N60F-O-F-N-B-VB Product details
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JCS2N60F-OFNB-VB MOSFET Product Introduction
JCS2N60F-OFNB-VB is a high voltage N-channel MOSFET in TO220F package, designed for applications requiring high withstand voltage and moderate current. With a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) rating of ±30V, it is ideal for a variety of power electronics and switching power supply applications. The MOSFET has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 1700mΩ at VGS=10V, which is suitable for handling relatively low leakage currents (ID) of 2A. The use of planar technology ensures its reliability and stability under high voltage conditions.
JCS2N60F-OFNB-VB is a high voltage N-channel MOSFET in TO220F package, designed for applications requiring high withstand voltage and moderate current. With a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) rating of ±30V, it is ideal for a variety of power electronics and switching power supply applications. The MOSFET has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 1700mΩ at VGS=10V, which is suitable for handling relatively low leakage currents (ID) of 2A. The use of planar technology ensures its reliability and stability under high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 1700mΩ @ VGS = 10V
- **ID (leakage current)**: 2A
- **Technology**: Planar technology
- **Power dissipation (Pd)**: Suitable for high power applications, but attention should be paid to heat dissipation design
- **Operating temperature range**: -55°C to 150°C (Tj max)
- **Gate charge (Qg)**: Provides moderate gate charge characteristics, suitable for switching operation.
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 1700mΩ @ VGS = 10V
- **ID (leakage current)**: 2A
- **Technology**: Planar technology
- **Power dissipation (Pd)**: Suitable for high power applications, but attention should be paid to heat dissipation design
- **Operating temperature range**: -55°C to 150°C (Tj max)
- **Gate charge (Qg)**: Provides moderate gate charge characteristics, suitable for switching operation.
Domain and module applications：
Applications and modules
JCS2N60F-OFNB-VB MOSFET has a wide range of applications in multiple fields, mainly including:
1. **High-voltage switching power supply**: Due to its drain-source voltage of up to 650V, JCS2N60F-OFNB-VB is very suitable for the design of high-voltage switching power supply. It can effectively control the switching state of the power supply and maintain high efficiency, suitable for various power conversion modules.
2. **Motor drive**: Despite its low leakage current, this MOSFET can still be used in some low-power motor drive applications, especially in environments with high voltage requirements, such as small power tools and household appliances.
3. **Lighting control**: JCS2N60F-OFNB-VB can be used for high-voltage LED driving and lighting control systems. Its high voltage capability and stability make it a key component in smart lighting solutions, ensuring high efficiency and reliability.
4. **Load switch application**: This MOSFET can be used as a switch for various loads and can efficiently control medium power loads. This has a wide range of application potentials in industrial control, communication equipment and automotive electronics.
The high withstand voltage and relatively low leakage current of the JCS2N60F-OFNB-VB MOSFET make it an ideal choice for high voltage applications, meeting a variety of power electronics requirements.
JCS2N60F-OFNB-VB MOSFET has a wide range of applications in multiple fields, mainly including:
1. **High-voltage switching power supply**: Due to its drain-source voltage of up to 650V, JCS2N60F-OFNB-VB is very suitable for the design of high-voltage switching power supply. It can effectively control the switching state of the power supply and maintain high efficiency, suitable for various power conversion modules.
2. **Motor drive**: Despite its low leakage current, this MOSFET can still be used in some low-power motor drive applications, especially in environments with high voltage requirements, such as small power tools and household appliances.
3. **Lighting control**: JCS2N60F-OFNB-VB can be used for high-voltage LED driving and lighting control systems. Its high voltage capability and stability make it a key component in smart lighting solutions, ensuring high efficiency and reliability.
4. **Load switch application**: This MOSFET can be used as a switch for various loads and can efficiently control medium power loads. This has a wide range of application potentials in industrial control, communication equipment and automotive electronics.
The high withstand voltage and relatively low leakage current of the JCS2N60F-OFNB-VB MOSFET make it an ideal choice for high voltage applications, meeting a variety of power electronics requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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