Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
|
3120mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO-251
- The TO-251 package provides good heat dissipation and easy installation, suitable for medium and low power applications.
2. **Configuration**: Single N-type channel
- This configuration is suitable for various circuit designs and can effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand, suitable for high-voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source, ensuring safe and stable operating conditions.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, providing good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS = 10V
- Relatively high on-resistance is suitable for low current or low power applications.
7. **Current rating (ID)**: 2A
- The maximum continuous current that the device can handle under normal operating conditions, suitable for light load applications.
8. **Technology**: Plannar
- Planar technology allows the device to maintain stability and reliability under high temperature and high voltage conditions.
---
Domain and module applications：
Application Examples
1. **Low Power Management**:
JCS1N60V-OVNB-VB is suitable for low power management circuits, such as switching power supplies and DC-DC converters. Although its on-resistance is relatively high, it can still achieve good energy efficiency in low current applications.
2. **Small Electronic Devices**:
This MOSFET can be used for load switch control in small electronic devices, such as portable devices and home appliances. Its high withstand voltage characteristics ensure the safe operation of the equipment in high voltage environments.
3. **Industrial Control Circuits**:
JCS1N60V-OVNB-VB is also widely used in industrial control circuits, especially in situations where high withstand voltage but low current demand is required, such as sensor interfaces and signal conditioning circuits.
4. **LED Drive Circuit**:
This device can be used in LED drive circuits, especially in the case of high voltage supply. Its reliability and stability ensure the normal operation and extended service life of the LED.
In summary, JCS1N60V-OVNB-VB is an N-type MOSFET suitable for high voltage and low power applications. It is widely used in power management, small electronic devices and industrial control fields, and is an important component of modern power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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