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JCS1N60V-O-V-N-B-VB Product details
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JCS1N60V-OVNB-VB MOSFET Product Introduction
**JCS1N60V-OVNB-VB** is a high-voltage N-type MOSFET in TO-251 package, designed for high-voltage applications. The device has a maximum drain-source voltage (VDS) of 650V, suitable for a variety of power management and switching applications. Its maximum gate-source voltage (VGS) is ±30V, ensuring safe and stable operation. The on-resistance (RDS(ON)) of JCS1N60V-OVNB-VB is 4300mΩ @ VGS=10V, suitable for low current (2A) applications. Using Plannar technology, the device has good performance under high voltage and medium current conditions and is widely used in the field of power electronics.
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**JCS1N60V-OVNB-VB** is a high-voltage N-type MOSFET in TO-251 package, designed for high-voltage applications. The device has a maximum drain-source voltage (VDS) of 650V, suitable for a variety of power management and switching applications. Its maximum gate-source voltage (VGS) is ±30V, ensuring safe and stable operation. The on-resistance (RDS(ON)) of JCS1N60V-OVNB-VB is 4300mΩ @ VGS=10V, suitable for low current (2A) applications. Using Plannar technology, the device has good performance under high voltage and medium current conditions and is widely used in the field of power electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO-251
- This package has good heat dissipation performance, suitable for high voltage applications, and is easy to install and connect electrically.
2. **Configuration**: Single N-type channel
- The design of N-type MOSFET makes it suitable for use in a variety of circuit configurations to effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand in the off state, suitable for high voltage circuit design.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source, ensuring safe and stable operating conditions.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, providing good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS = 10V
- Suitable for medium power applications, but note that higher on-resistance may result in greater heat dissipation.
7. **Current rating (ID)**: 2A
- The maximum continuous current that the device can handle under normal conditions, suitable for low current applications.
8. **Technology**: Plannar
- Plannar technology allows the device to perform well under high voltage conditions, suitable for general power switching applications.
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1. **Package**: TO-251
- This package has good heat dissipation performance, suitable for high voltage applications, and is easy to install and connect electrically.
2. **Configuration**: Single N-type channel
- The design of N-type MOSFET makes it suitable for use in a variety of circuit configurations to effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand in the off state, suitable for high voltage circuit design.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source, ensuring safe and stable operating conditions.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, providing good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS = 10V
- Suitable for medium power applications, but note that higher on-resistance may result in greater heat dissipation.
7. **Current rating (ID)**: 2A
- The maximum continuous current that the device can handle under normal conditions, suitable for low current applications.
8. **Technology**: Plannar
- Plannar technology allows the device to perform well under high voltage conditions, suitable for general power switching applications.
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Domain and module applications：
Application Examples
1. **Switching Power Supply**:
The JCS1N60V-OVNB-VB is often used in switching power supply designs, especially where high voltage is required. Its high drain-source voltage and relatively low on-resistance enable it to effectively control the current flow and reduce energy loss during the power conversion process.
2. **LED Drive Circuit**:
In LED drive applications, the JCS1N60V-OVNB-VB is used to control the current to ensure that the LED runs at a constant current. Its moderate current rating makes it an ideal choice for small and medium-sized LED lighting applications.
3. **Small Motor Control**:
This MOSFET is suitable for small motor control circuits, such as fan drives and small pumps. Although its current rating is low, it can still work stably in small devices.
4. **Home Appliance Application**:
JCS1N60V-OVNB-VB is also widely used in home appliances, such as power tools, microwave ovens and other home appliances that require high voltage switching control. Its reliability and high voltage characteristics make it perform well in these applications.
In summary, JCS1N60V-OVNB-VB is an N-type MOSFET suitable for applications such as high voltage power management, LED driving and small motor control. It has become an important part of modern power electronic equipment with its stability and reliability.
1. **Switching Power Supply**:
The JCS1N60V-OVNB-VB is often used in switching power supply designs, especially where high voltage is required. Its high drain-source voltage and relatively low on-resistance enable it to effectively control the current flow and reduce energy loss during the power conversion process.
2. **LED Drive Circuit**:
In LED drive applications, the JCS1N60V-OVNB-VB is used to control the current to ensure that the LED runs at a constant current. Its moderate current rating makes it an ideal choice for small and medium-sized LED lighting applications.
3. **Small Motor Control**:
This MOSFET is suitable for small motor control circuits, such as fan drives and small pumps. Although its current rating is low, it can still work stably in small devices.
4. **Home Appliance Application**:
JCS1N60V-OVNB-VB is also widely used in home appliances, such as power tools, microwave ovens and other home appliances that require high voltage switching control. Its reliability and high voltage characteristics make it perform well in these applications.
In summary, JCS1N60V-OVNB-VB is an N-type MOSFET suitable for applications such as high voltage power management, LED driving and small motor control. It has become an important part of modern power electronic equipment with its stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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