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JCS1N60F-VB Product details
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Product Introduction: JCS1N60F-VB
JCS1N60F-VB is a high-efficiency single N-channel power MOSFET in TO220F package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 650V, which is suitable for switching and control circuits under high voltage conditions. The device has a gate threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 320mΩ at a gate voltage of 10V, and supports a drain current (ID) of up to 20A. Using planar technology, JCS1N60F-VB ensures superior performance in high efficiency and reliability, and is suitable for a variety of power management and switching applications.
JCS1N60F-VB is a high-efficiency single N-channel power MOSFET in TO220F package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 650V, which is suitable for switching and control circuits under high voltage conditions. The device has a gate threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 320mΩ at a gate voltage of 10V, and supports a drain current (ID) of up to 20A. Using planar technology, JCS1N60F-VB ensures superior performance in high efficiency and reliability, and is suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
1. **Package**: TO220F
- TO220F package design has good heat dissipation performance, suitable for PCB layout of various electronic devices, ensuring temperature management during high power operation.
2. **Configuration**: Single N-channel
- The single N-channel structure provides excellent conduction characteristics and is suitable for a variety of power control and switching applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which is suitable for applications in high voltage environments, ensuring the safety and stability of the equipment.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range is ±30V, ensuring the safety and reliability of the device under different working conditions.
5. **Gate Threshold Voltage (Vth)**: 3.5V
- The higher gate threshold voltage provides good switching characteristics for this MOSFET, enabling it to turn on efficiently at an appropriate gate voltage.
6. **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- Low on-resistance reduces power loss and improves overall energy efficiency, making it suitable for high-power applications with long operating times.
7. **Drain Current (ID)**: 20A
- The maximum continuous drain current is 20A, which can meet the needs of high current loads.
8. **Technology**: Plannar
- Designed using planar technology, it provides better current handling capability and switching characteristics, ensuring reliability under high load conditions.
1. **Package**: TO220F
- TO220F package design has good heat dissipation performance, suitable for PCB layout of various electronic devices, ensuring temperature management during high power operation.
2. **Configuration**: Single N-channel
- The single N-channel structure provides excellent conduction characteristics and is suitable for a variety of power control and switching applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which is suitable for applications in high voltage environments, ensuring the safety and stability of the equipment.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range is ±30V, ensuring the safety and reliability of the device under different working conditions.
5. **Gate Threshold Voltage (Vth)**: 3.5V
- The higher gate threshold voltage provides good switching characteristics for this MOSFET, enabling it to turn on efficiently at an appropriate gate voltage.
6. **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- Low on-resistance reduces power loss and improves overall energy efficiency, making it suitable for high-power applications with long operating times.
7. **Drain Current (ID)**: 20A
- The maximum continuous drain current is 20A, which can meet the needs of high current loads.
8. **Technology**: Plannar
- Designed using planar technology, it provides better current handling capability and switching characteristics, ensuring reliability under high load conditions.
Domain and module applications：
Application fields and modules:
1. **Switching power supply**:
JCS1N60F-VB is widely used in switching power supplies (SMPS) to efficiently convert power under high voltage and high power conditions. Its excellent conduction performance and low on-resistance reduce energy loss and improve overall efficiency.
2. **Motor drive**:
This MOSFET is suitable for the drive circuit of DC motors and stepper motors. It can handle high voltage and high current, ensure efficient control and stable operation of the motor, and is widely used in industrial automation and home appliances.
3. **Inverter**:
JCS1N60F-VB can be used in solar inverters and uninterruptible power supply (UPS) systems. It can work stably under high voltage and high power conditions and support efficient energy conversion.
4. **Lighting control**:
In LED lighting systems, this MOSFET can be used as a driving switch to control the brightness and switching state of the LED. Its high voltage handling capability ensures the stability and efficiency of lighting applications.
With its excellent performance and wide application fields, JCS1N60F-VB provides strong support for the power management of modern high-efficiency electronic devices, meeting the needs of high efficiency and high power.
1. **Switching power supply**:
JCS1N60F-VB is widely used in switching power supplies (SMPS) to efficiently convert power under high voltage and high power conditions. Its excellent conduction performance and low on-resistance reduce energy loss and improve overall efficiency.
2. **Motor drive**:
This MOSFET is suitable for the drive circuit of DC motors and stepper motors. It can handle high voltage and high current, ensure efficient control and stable operation of the motor, and is widely used in industrial automation and home appliances.
3. **Inverter**:
JCS1N60F-VB can be used in solar inverters and uninterruptible power supply (UPS) systems. It can work stably under high voltage and high power conditions and support efficient energy conversion.
4. **Lighting control**:
In LED lighting systems, this MOSFET can be used as a driving switch to control the brightness and switching state of the LED. Its high voltage handling capability ensures the stability and efficiency of lighting applications.
With its excellent performance and wide application fields, JCS1N60F-VB provides strong support for the power management of modern high-efficiency electronic devices, meeting the needs of high efficiency and high power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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