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JCS18N50FH-O-F-N-B-VB Product details
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JCS18N50FH-OFNB-VB MOSFET Product Introduction
JCS18N50FH-OFNB-VB is a high-performance single N-channel MOSFET in a TO220F package, designed for high voltage and high-efficiency applications. Its maximum drain-source voltage (VDS) is up to 650V, making it suitable for use in high-voltage power supplies and motor control systems. The device has a threshold voltage (Vth) of 3.5V and can be turned on and off quickly at low gate drive voltages. With a low on-resistance (RDS(ON)) of 160mΩ @ VGS=10V, the JCS18N50FH-OFNB-VB can effectively reduce power losses and improve overall system efficiency. In addition, its rated drain current (ID) is 20A, ensuring reliability and stability under load conditions, and is particularly suitable for harsh electrical environments.
JCS18N50FH-OFNB-VB is a high-performance single N-channel MOSFET in a TO220F package, designed for high voltage and high-efficiency applications. Its maximum drain-source voltage (VDS) is up to 650V, making it suitable for use in high-voltage power supplies and motor control systems. The device has a threshold voltage (Vth) of 3.5V and can be turned on and off quickly at low gate drive voltages. With a low on-resistance (RDS(ON)) of 160mΩ @ VGS=10V, the JCS18N50FH-OFNB-VB can effectively reduce power losses and improve overall system efficiency. In addition, its rated drain current (ID) is 20A, ensuring reliability and stability under load conditions, and is particularly suitable for harsh electrical environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
JCS18N50FH-OFNB-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
JCS18N50FH-OFNB-VB application areas and module examples
1. **Power management**: JCS18N50FH-OFNB-VB is widely used in high-voltage DC-DC converters and AC-DC power supplies, and can efficiently manage the power conversion process. Its high voltage resistance allows it to operate stably in power management modules and is suitable for industrial equipment and data center power supplies.
2. **Motor control**: In motor drive applications, this MOSFET can be used as a high-side switch, suitable for various types of motor control systems, such as power tools, automated production lines, and household appliances. Its low on-resistance helps improve the energy efficiency of the motor and reduce energy loss.
3. **Automotive electronics**: JCS18N50FH-OFNB-VB also has important applications in the field of automotive electronics, such as power windows, headlight control, and power steering systems. Its high voltage capability and reliability ensure stable operation in complex automotive environments.
4. **Renewable Energy**: In solar inverters and wind power generation systems, this MOSFET can be used for efficient power conversion and management. Its excellent conductivity and withstand voltage characteristics enable it to achieve higher energy conversion efficiency in the field of renewable energy.
Through the above application examples, JCS18N50FH-OFNB-VB demonstrates its important role in the field of high voltage and high efficiency, providing a stable and reliable solution for modern electronic devices.
1. **Power management**: JCS18N50FH-OFNB-VB is widely used in high-voltage DC-DC converters and AC-DC power supplies, and can efficiently manage the power conversion process. Its high voltage resistance allows it to operate stably in power management modules and is suitable for industrial equipment and data center power supplies.
2. **Motor control**: In motor drive applications, this MOSFET can be used as a high-side switch, suitable for various types of motor control systems, such as power tools, automated production lines, and household appliances. Its low on-resistance helps improve the energy efficiency of the motor and reduce energy loss.
3. **Automotive electronics**: JCS18N50FH-OFNB-VB also has important applications in the field of automotive electronics, such as power windows, headlight control, and power steering systems. Its high voltage capability and reliability ensure stable operation in complex automotive environments.
4. **Renewable Energy**: In solar inverters and wind power generation systems, this MOSFET can be used for efficient power conversion and management. Its excellent conductivity and withstand voltage characteristics enable it to achieve higher energy conversion efficiency in the field of renewable energy.
Through the above application examples, JCS18N50FH-OFNB-VB demonstrates its important role in the field of high voltage and high efficiency, providing a stable and reliable solution for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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