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JCS15N60FH-R-F-N-B-VB Product details
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JCS15N60FH-RFNB-VB MOSFET Product Introduction
JCS15N60FH-RFNB-VB is a high voltage N-channel MOSFET in TO220F package, designed for high power and high efficiency applications. Its drain-source voltage (VDS) can be as high as 650V, and its gate-source voltage (VGS) is rated at ±30V, which is suitable for various power electronics and industrial equipment. The threshold voltage (Vth) of this MOSFET is 3.5V, and the on-resistance (RDS(ON)) is 320mΩ at VGS=10V, which can effectively reduce conduction loss and improve the energy efficiency of the system. In addition, its maximum leakage current (ID) can reach 20A, making it ideal for high power applications. It is produced using planar technology (Plannar), which ensures its reliability and stability under high voltage conditions.
JCS15N60FH-RFNB-VB is a high voltage N-channel MOSFET in TO220F package, designed for high power and high efficiency applications. Its drain-source voltage (VDS) can be as high as 650V, and its gate-source voltage (VGS) is rated at ±30V, which is suitable for various power electronics and industrial equipment. The threshold voltage (Vth) of this MOSFET is 3.5V, and the on-resistance (RDS(ON)) is 320mΩ at VGS=10V, which can effectively reduce conduction loss and improve the energy efficiency of the system. In addition, its maximum leakage current (ID) can reach 20A, making it ideal for high power applications. It is produced using planar technology (Plannar), which ensures its reliability and stability under high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 320mΩ @ VGS = 10V
- **ID (drain current)**: 20A
- **Technology**: Planar technology
- **Power dissipation (Pd)**: With good thermal management capabilities, suitable for high power applications
- **Operating temperature range**: -55°C to 150°C (Tj max)
- **Gate charge (Qg)**: Provides low gate charge characteristics to ensure fast switching operation.
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 320mΩ @ VGS = 10V
- **ID (drain current)**: 20A
- **Technology**: Planar technology
- **Power dissipation (Pd)**: With good thermal management capabilities, suitable for high power applications
- **Operating temperature range**: -55°C to 150°C (Tj max)
- **Gate charge (Qg)**: Provides low gate charge characteristics to ensure fast switching operation.
Domain and module applications：
Applications and modules
JCS15N60FH-RFNB-VB MOSFET is widely used in many fields, mainly including:
1. **Power management**: Due to its high voltage capability and moderate on-resistance, JCS15N60FH-RFNB-VB MOSFET is very suitable for high-voltage DC-DC converters and switching power supplies. Its application in power electronic equipment can significantly improve energy efficiency, reduce power consumption and ensure system stability.
2. **Motor drive**: This MOSFET can be widely used in motor control, including motor drive systems for home appliances, industrial equipment and electric vehicles. Its maximum leakage current capability of 20A enables it to handle the driving needs of high-power motors, especially in high voltage and high power environments.
3. **Lighting control**: JCS15N60FH-RFNB-VB MOSFET is suitable for LED driving and intelligent lighting control. Its high voltage characteristics and fast switching capabilities make it a key component in high-efficiency lighting solutions, improving the overall performance and energy efficiency of lighting systems.
4. **Power Switch**: This MOSFET is suitable for a variety of switching applications, including power switches and load switches, and can efficiently control high-power loads. This makes it have a wide range of application potential in industrial control, communication equipment and automotive electronics.
The high performance, reliability and adaptability of the JCS15N60FH-RFNB-VB MOSFET in high-power applications make it an ideal choice for power electronics and power management.
JCS15N60FH-RFNB-VB MOSFET is widely used in many fields, mainly including:
1. **Power management**: Due to its high voltage capability and moderate on-resistance, JCS15N60FH-RFNB-VB MOSFET is very suitable for high-voltage DC-DC converters and switching power supplies. Its application in power electronic equipment can significantly improve energy efficiency, reduce power consumption and ensure system stability.
2. **Motor drive**: This MOSFET can be widely used in motor control, including motor drive systems for home appliances, industrial equipment and electric vehicles. Its maximum leakage current capability of 20A enables it to handle the driving needs of high-power motors, especially in high voltage and high power environments.
3. **Lighting control**: JCS15N60FH-RFNB-VB MOSFET is suitable for LED driving and intelligent lighting control. Its high voltage characteristics and fast switching capabilities make it a key component in high-efficiency lighting solutions, improving the overall performance and energy efficiency of lighting systems.
4. **Power Switch**: This MOSFET is suitable for a variety of switching applications, including power switches and load switches, and can efficiently control high-power loads. This makes it have a wide range of application potential in industrial control, communication equipment and automotive electronics.
The high performance, reliability and adaptability of the JCS15N60FH-RFNB-VB MOSFET in high-power applications make it an ideal choice for power electronics and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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