中文
English
JCS12N65FT-O-F-N-B-VB Product details
Back to previous pageProduct introduction：
Product Introduction: JCS12N65FT-OFNB-VB
JCS12N65FT-OFNB-VB is a high-performance single N-channel power MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 650V, suitable for switching and control applications under high voltage conditions. The device has a high gate threshold voltage (Vth) of 3.5V, and an on-resistance (RDS(ON)) of 680mΩ at a gate voltage of 10V, supporting a drain current (ID) of up to 12A. Using planar technology, JCS12N65FT-OFNB-VB excels in high efficiency and reliability, and can meet the needs of various power management and switching applications.
JCS12N65FT-OFNB-VB is a high-performance single N-channel power MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 650V, suitable for switching and control applications under high voltage conditions. The device has a high gate threshold voltage (Vth) of 3.5V, and an on-resistance (RDS(ON)) of 680mΩ at a gate voltage of 10V, supporting a drain current (ID) of up to 12A. Using planar technology, JCS12N65FT-OFNB-VB excels in high efficiency and reliability, and can meet the needs of various power management and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
1. **Package**: TO220F
- The TO220F package design has good heat dissipation performance and mechanical strength, suitable for PCB layout of various electronic devices.
2. **Configuration**: Single N-channel
- The single N-channel structure provides good conduction characteristics and efficient switching performance, suitable for a variety of power control applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, suitable for high voltage applications, ensuring stable operation of the equipment in harsh environments.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range is ±30V, ensuring the safety and reliability of the device under various working conditions.
5. **Gate Threshold Voltage (Vth)**: 3.5V
- The higher gate threshold voltage provides good switching characteristics, allowing the MOSFET to be efficiently turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- Lower on-resistance reduces power loss and improves overall energy efficiency, making it suitable for applications with long operating times.
7. **Drain Current (ID)**: 12A
- The maximum continuous drain current is 12A, meeting the needs of medium current loads.
8. **Technology**: Plannar
- Designed using planar technology, it has good current handling capability and switching characteristics.
1. **Package**: TO220F
- The TO220F package design has good heat dissipation performance and mechanical strength, suitable for PCB layout of various electronic devices.
2. **Configuration**: Single N-channel
- The single N-channel structure provides good conduction characteristics and efficient switching performance, suitable for a variety of power control applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, suitable for high voltage applications, ensuring stable operation of the equipment in harsh environments.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range is ±30V, ensuring the safety and reliability of the device under various working conditions.
5. **Gate Threshold Voltage (Vth)**: 3.5V
- The higher gate threshold voltage provides good switching characteristics, allowing the MOSFET to be efficiently turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- Lower on-resistance reduces power loss and improves overall energy efficiency, making it suitable for applications with long operating times.
7. **Drain Current (ID)**: 12A
- The maximum continuous drain current is 12A, meeting the needs of medium current loads.
8. **Technology**: Plannar
- Designed using planar technology, it has good current handling capability and switching characteristics.
Domain and module applications：
Applications and modules:
1. **Switching Power Supply**:
JCS12N65FT-OFNB-VB is widely used in switching power supplies (SMPS), which can efficiently convert power under high voltage conditions. Its excellent conduction performance and low on-resistance reduce energy loss during power conversion and improve overall energy efficiency.
2. **Motor Drive**:
This MOSFET can be used in DC motor and stepper motor drive circuits to meet the needs of high voltage and medium current. Its reliable performance ensures efficient control of the motor during startup and operation, and is suitable for industrial automation and home appliances.
3. **Inverter**:
JCS12N65FT-OFNB-VB is suitable for inverter applications such as solar inverters and UPS systems, and can work stably under high voltage and high power conditions to support efficient energy conversion.
4. **Lighting control**:
In LED lighting systems, this MOSFET can be used as a driver switch to control the brightness and on/off state of the LED. Its high voltage handling capability enables it to provide stable performance in a variety of lighting applications.
With its excellent performance and wide range of applications, JCS12N65FT-OFNB-VB provides a reliable solution for power management of modern high-efficiency electronic devices.
1. **Switching Power Supply**:
JCS12N65FT-OFNB-VB is widely used in switching power supplies (SMPS), which can efficiently convert power under high voltage conditions. Its excellent conduction performance and low on-resistance reduce energy loss during power conversion and improve overall energy efficiency.
2. **Motor Drive**:
This MOSFET can be used in DC motor and stepper motor drive circuits to meet the needs of high voltage and medium current. Its reliable performance ensures efficient control of the motor during startup and operation, and is suitable for industrial automation and home appliances.
3. **Inverter**:
JCS12N65FT-OFNB-VB is suitable for inverter applications such as solar inverters and UPS systems, and can work stably under high voltage and high power conditions to support efficient energy conversion.
4. **Lighting control**:
In LED lighting systems, this MOSFET can be used as a driver switch to control the brightness and on/off state of the LED. Its high voltage handling capability enables it to provide stable performance in a variety of lighting applications.
With its excellent performance and wide range of applications, JCS12N65FT-OFNB-VB provides a reliable solution for power management of modern high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
