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JCS10N65FT-R-F-N-B-VB Product details

Product introduction:

JCS10N65FT-RFNB-VB Product Introduction

JCS10N65FT-RFNB-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage and high power applications. The device has a rated drain-source voltage (VDS) of 650V, can operate stably under extreme conditions, and supports a gate-source voltage (VGS) of ±30V. Its turn-on threshold voltage (Vth) is 3.5V, ensuring rapid turn-on at a reasonable gate voltage. The on-resistance (RDS(ON)) of JCS10N65FT-RFNB-VB is 830mΩ at a VGS of 10V, and the maximum drain current (ID) is 10A. This MOSFET adopts planar technology, has good thermal management characteristics and high efficiency, and is suitable for power management, switch control and industrial applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 10A 830mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 10A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 10A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description

- **Model**: JCS10N65FT-RFNB-VB
- **Package**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology type**: Plannar
- **Maximum power dissipation (PD)**: 80W
- **Thermal resistance (RθJC)**: 5°C/W
- **Operating temperature range**: -55°C to 150°C

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Domain and module applications:

Applications and module descriptions

1. **Switching Power Supply**: JCS10N65FT-RFNB-VB is ideal for switching power supply (SMPS) applications, capable of handling high voltage and high power. Its low on-resistance ensures high efficiency during switching operations, helping to improve power conversion efficiency.

2. **Motor Drive**: This MOSFET can be widely used in motor drive circuits, especially in industrial motor control that requires high voltage and current. Its excellent thermal management performance can help motor systems maintain stable operation under high load conditions.

3. **Lighting Control**: In high-power LED drivers and other lighting control modules, JCS10N65FT-RFNB-VB can be used as an efficient switching element that can quickly switch power and improve lighting efficiency.

4. **Inverter**: Due to its high voltage carrying capacity, the JCS10N65FT-RFNB-VB is suitable for solar inverters and other types of inverter designs, which can effectively handle high voltage output from batteries or solar panels.

5. **Industrial Automation**: In industrial automation equipment, the JCS10N65FT-RFNB-VB can be used for high voltage control circuits, such as the control of sensors and actuators, ensuring the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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