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J666-VB Product details
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Product Introduction: J666-VB
J666-VB is a high-performance single P-channel power MOSFET in TO-263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is -100V, and it can operate stably at a gate-source voltage (VGS) of ±20V. The device has a low gate threshold voltage (Vth) of -2V, and an on-resistance of 50mΩ and 40mΩ at a gate voltage of 4.5V and 10V, respectively, supporting a continuous drain current (ID) of up to -37A. Using advanced trench technology, J666-VB ensures reliability under high efficiency and low power consumption conditions, and is very suitable for a variety of power management and switch control applications.
J666-VB is a high-performance single P-channel power MOSFET in TO-263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is -100V, and it can operate stably at a gate-source voltage (VGS) of ±20V. The device has a low gate threshold voltage (Vth) of -2V, and an on-resistance of 50mΩ and 40mΩ at a gate voltage of 4.5V and 10V, respectively, supporting a continuous drain current (ID) of up to -37A. Using advanced trench technology, J666-VB ensures reliability under high efficiency and low power consumption conditions, and is very suitable for a variety of power management and switch control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description:
1. **Package**: TO-263
- TO-263 package has good heat dissipation performance and moderate volume, suitable for PCB layout of various electronic devices.
2. **Configuration**: Single P-channel
- The single P-channel structure is suitable for various power switching and load driving applications.
3. **Drain-source voltage (VDS)**: -100V
- The maximum drain-source voltage of this MOSFET is -100V, which is suitable for applications in high voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- The gate-source voltage range is ±20V, ensuring the safety and reliability of the device under various working conditions.
5. **Gate threshold voltage (Vth)**: -2V
- The lower gate threshold voltage enables this MOSFET to turn on at a lower gate voltage, enhancing driving flexibility.
6. **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- Low on-resistance reduces power loss and improves system efficiency.
7. **Drain current (ID)**: -37A
- Maximum continuous drain current is -37A, meeting the needs of high current loads.
8. **Technology**: Trench
- Using Trench technology, it provides higher power density and excellent switching performance.
1. **Package**: TO-263
- TO-263 package has good heat dissipation performance and moderate volume, suitable for PCB layout of various electronic devices.
2. **Configuration**: Single P-channel
- The single P-channel structure is suitable for various power switching and load driving applications.
3. **Drain-source voltage (VDS)**: -100V
- The maximum drain-source voltage of this MOSFET is -100V, which is suitable for applications in high voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- The gate-source voltage range is ±20V, ensuring the safety and reliability of the device under various working conditions.
5. **Gate threshold voltage (Vth)**: -2V
- The lower gate threshold voltage enables this MOSFET to turn on at a lower gate voltage, enhancing driving flexibility.
6. **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- Low on-resistance reduces power loss and improves system efficiency.
7. **Drain current (ID)**: -37A
- Maximum continuous drain current is -37A, meeting the needs of high current loads.
8. **Technology**: Trench
- Using Trench technology, it provides higher power density and excellent switching performance.
Domain and module applications：
Applications and modules:
1. **Power converter**:
J666-VB is widely used in DC-DC converters and switching power supply modules, which can effectively convert and manage power to meet the needs of high efficiency and low power consumption. Its high current capability and low on-resistance keep the energy loss low during power conversion.
2. **Motor drive**:
This MOSFET is suitable for DC motor drivers and stepper motor controllers, providing high efficiency and reliability. Due to its high current handling capability, it can meet the starting and speed regulation requirements of motors and is widely used in industrial automation and home appliances.
3. **LED driver**:
J666-VB can be used in the drive circuit of LED lighting applications, providing stable current control to ensure the brightness consistency and long life of LEDs. Its superior switching performance makes it outstanding in high-frequency LED drives.
4. **Battery Management System**:
In the battery management system, J666-VB can be used as an efficient switching device to control the battery charging and discharging process, improve the overall energy efficiency and system safety. It is suitable for electric vehicles, portable devices and other application scenarios that require efficient battery management.
With its excellent performance and flexible application areas, J666-VB provides strong support for modern electronic devices and meets the needs of high efficiency and high power.
1. **Power converter**:
J666-VB is widely used in DC-DC converters and switching power supply modules, which can effectively convert and manage power to meet the needs of high efficiency and low power consumption. Its high current capability and low on-resistance keep the energy loss low during power conversion.
2. **Motor drive**:
This MOSFET is suitable for DC motor drivers and stepper motor controllers, providing high efficiency and reliability. Due to its high current handling capability, it can meet the starting and speed regulation requirements of motors and is widely used in industrial automation and home appliances.
3. **LED driver**:
J666-VB can be used in the drive circuit of LED lighting applications, providing stable current control to ensure the brightness consistency and long life of LEDs. Its superior switching performance makes it outstanding in high-frequency LED drives.
4. **Battery Management System**:
In the battery management system, J666-VB can be used as an efficient switching device to control the battery charging and discharging process, improve the overall energy efficiency and system safety. It is suitable for electric vehicles, portable devices and other application scenarios that require efficient battery management.
With its excellent performance and flexible application areas, J666-VB provides strong support for modern electronic devices and meets the needs of high efficiency and high power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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