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J663-VB Product details
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J663-VB Product Introduction
J663-VB is a high-performance single P-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its rated drain-source voltage (VDS) is -100V and supports a gate-source voltage (VGS) of ±20V, making it suitable for a variety of power management and switch control applications. The J663-VB has a turn-on threshold voltage (Vth) of -2V, ensuring fast turn-on at a lower gate voltage. The device's on-resistance (RDS(ON)) is 240mΩ at VGS of 4.5V and drops to 200mΩ at VGS of 10V, which keeps power consumption low under high load conditions, with a maximum drain current (ID) of -12A. The J663-VB with Trench technology has excellent thermal management characteristics and high efficiency, making it very suitable for power conversion, switching applications, and battery management.
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J663-VB is a high-performance single P-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its rated drain-source voltage (VDS) is -100V and supports a gate-source voltage (VGS) of ±20V, making it suitable for a variety of power management and switch control applications. The J663-VB has a turn-on threshold voltage (Vth) of -2V, ensuring fast turn-on at a lower gate voltage. The device's on-resistance (RDS(ON)) is 240mΩ at VGS of 4.5V and drops to 200mΩ at VGS of 10V, which keeps power consumption low under high load conditions, with a maximum drain current (ID) of -12A. The J663-VB with Trench technology has excellent thermal management characteristics and high efficiency, making it very suitable for power conversion, switching applications, and battery management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Model**: J663-VB
- **Package**: TO263
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=4.5V
- 200mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Technology type**: Trench technology
- **Maximum power dissipation (PD)**: 50W
- **Thermal resistance (RθJC)**: 3°C/W
- **Operating temperature range**: -55°C to 150°C
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- **Model**: J663-VB
- **Package**: TO263
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=4.5V
- 200mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Technology type**: Trench technology
- **Maximum power dissipation (PD)**: 50W
- **Thermal resistance (RθJC)**: 3°C/W
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications：
Applications and Module Descriptions
1. **Power Management**: J663-VB is ideal for high voltage DC-DC converters and power adapters. In these applications, it can effectively manage high voltage and high current, provide stable power output, and ensure high efficiency and reliability of the system.
2. **LED Driver**: In LED lighting systems, J663-VB can be used to drive high power LEDs to ensure stable output current. Its low on-resistance helps reduce energy consumption and provides uniform lighting effects, suitable for commercial and industrial lighting applications.
3. **Electric Vehicles and Charging Stations**: Due to its ability to withstand high voltage and high current, J663-VB is suitable for battery management systems and charging stations for electric vehicles. In these systems, it can quickly switch current and ensure battery safety and performance.
4. **Industrial Automation**: This MOSFET is also widely used in industrial automation control, including motor drive and switch control. In applications requiring fast response and high reliability, the J663-VB provides outstanding performance and helps improve overall system efficiency.
1. **Power Management**: J663-VB is ideal for high voltage DC-DC converters and power adapters. In these applications, it can effectively manage high voltage and high current, provide stable power output, and ensure high efficiency and reliability of the system.
2. **LED Driver**: In LED lighting systems, J663-VB can be used to drive high power LEDs to ensure stable output current. Its low on-resistance helps reduce energy consumption and provides uniform lighting effects, suitable for commercial and industrial lighting applications.
3. **Electric Vehicles and Charging Stations**: Due to its ability to withstand high voltage and high current, J663-VB is suitable for battery management systems and charging stations for electric vehicles. In these systems, it can quickly switch current and ensure battery safety and performance.
4. **Industrial Automation**: This MOSFET is also widely used in industrial automation control, including motor drive and switch control. In applications requiring fast response and high reliability, the J663-VB provides outstanding performance and helps improve overall system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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