中文
English
J659-VB Product details
Back to previous pageProduct introduction：
J659-VB MOSFET Product Introduction
J659-VB is a high-performance single P-channel MOSFET in TO263 package, designed for high current and low voltage applications. Its drain-source voltage (VDS) is -60V, and the gate-source voltage (VGS) is rated at ±20V. It uses advanced trench technology to ensure efficient and reliable operation. The threshold voltage (Vth) of J659-VB is -1.7V, and the on-resistance (RDS(ON)) is 77mΩ at VGS=4.5V and 64mΩ at VGS=10V, which can effectively reduce conduction losses. In addition, its maximum drain current (ID) can reach -30A, which is suitable for handling high power loads.
J659-VB is a high-performance single P-channel MOSFET in TO263 package, designed for high current and low voltage applications. Its drain-source voltage (VDS) is -60V, and the gate-source voltage (VGS) is rated at ±20V. It uses advanced trench technology to ensure efficient and reliable operation. The threshold voltage (Vth) of J659-VB is -1.7V, and the on-resistance (RDS(ON)) is 77mΩ at VGS=4.5V and 64mΩ at VGS=10V, which can effectively reduce conduction losses. In addition, its maximum drain current (ID) can reach -30A, which is suitable for handling high power loads.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single P channel
- **VDS (drain-source voltage)**: -60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V
- **RDS(ON) (on-resistance)**:
- 77mΩ @ VGS = 4.5V
- 64mΩ @ VGS = 10V
- **ID (leakage current)**: -30A
- **Technology**: Trench technology
- **Power dissipation (Pd)**: With good heat dissipation performance, suitable for high power applications
- **Operating temperature range**: -55°C to 150°C (Tj max)
- **Gate charge (Qg)**: Low gate charge ensures efficient switching performance.
- **Package**: TO263
- **Configuration**: Single P channel
- **VDS (drain-source voltage)**: -60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V
- **RDS(ON) (on-resistance)**:
- 77mΩ @ VGS = 4.5V
- 64mΩ @ VGS = 10V
- **ID (leakage current)**: -30A
- **Technology**: Trench technology
- **Power dissipation (Pd)**: With good heat dissipation performance, suitable for high power applications
- **Operating temperature range**: -55°C to 150°C (Tj max)
- **Gate charge (Qg)**: Low gate charge ensures efficient switching performance.
Domain and module applications：
Applications and modules
J659-VB MOSFET has a wide range of applications in multiple fields, mainly including:
1. **Power management**: J659-VB MOSFET is well suited for use in DC-DC converters and power modules. Its low on-resistance and high current handling capability make it an excellent performer in computer power supplies, communication equipment and industrial power management systems, which can improve energy efficiency and reduce heat generation.
2. **Battery management system**: This MOSFET is suitable for battery management applications, especially in electric vehicles and renewable energy storage systems. The P-channel configuration simplifies the design of high-side switches, enabling it to effectively manage the battery charging and discharging process, ensuring safety and efficiency.
3. **Motor drive**: J659-VB is also suitable for motor control applications, especially in motor drives for power tools, home appliances and electric vehicles. With its high leakage current capability of up to -30A, J659-VB can meet the driving needs of high-power motors, especially in environments with high power density and efficiency requirements.
4. **Load Switch**: J659-VB MOSFET can be used in load switch applications, which can efficiently control the flow of current and is suitable for switching control of various high-power loads. This makes it have good application prospects in consumer electronics, industrial equipment and automotive electronics.
The excellent performance and wide applicability of J659-VB MOSFET make it an ideal solution for high-power switching tasks.
J659-VB MOSFET has a wide range of applications in multiple fields, mainly including:
1. **Power management**: J659-VB MOSFET is well suited for use in DC-DC converters and power modules. Its low on-resistance and high current handling capability make it an excellent performer in computer power supplies, communication equipment and industrial power management systems, which can improve energy efficiency and reduce heat generation.
2. **Battery management system**: This MOSFET is suitable for battery management applications, especially in electric vehicles and renewable energy storage systems. The P-channel configuration simplifies the design of high-side switches, enabling it to effectively manage the battery charging and discharging process, ensuring safety and efficiency.
3. **Motor drive**: J659-VB is also suitable for motor control applications, especially in motor drives for power tools, home appliances and electric vehicles. With its high leakage current capability of up to -30A, J659-VB can meet the driving needs of high-power motors, especially in environments with high power density and efficiency requirements.
4. **Load Switch**: J659-VB MOSFET can be used in load switch applications, which can efficiently control the flow of current and is suitable for switching control of various high-power loads. This makes it have good application prospects in consumer electronics, industrial equipment and automotive electronics.
The excellent performance and wide applicability of J659-VB MOSFET make it an ideal solution for high-power switching tasks.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
