中文
English
J657-VB Product details
Back to previous pageProduct introduction：
J657-VB MOSFET Product Introduction:
**J657-VB** is a high-performance P-channel MOSFET designed for high voltage and high power applications. It uses Trench technology to achieve low on-resistance and excellent switching performance, enabling it to perform well in a variety of harsh application environments. The device is packaged in **TO-220F**, providing superior heat dissipation and current carrying capacity, suitable for use in power management and control systems.
---
**J657-VB** is a high-performance P-channel MOSFET designed for high voltage and high power applications. It uses Trench technology to achieve low on-resistance and excellent switching performance, enabling it to perform well in a variety of harsh application environments. The device is packaged in **TO-220F**, providing superior heat dissipation and current carrying capacity, suitable for use in power management and control systems.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -50A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description of J657-VB:
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- **@VGS=4.5V: 37mΩ**
- **@VGS=10V: 33mΩ**
- **Drain current (ID)**: -50A
- **Technology**: Trench
- **Package**: TO-220F
- **Operating temperature range**: Typically -55°C to 150°C (depending on manufacturer's details)
- **Power dissipation (PD)**: Due to the limitations of the TO-220F package, further confirmation is required.
---
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- **@VGS=4.5V: 37mΩ**
- **@VGS=10V: 33mΩ**
- **Drain current (ID)**: -50A
- **Technology**: Trench
- **Package**: TO-220F
- **Operating temperature range**: Typically -55°C to 150°C (depending on manufacturer's details)
- **Power dissipation (PD)**: Due to the limitations of the TO-220F package, further confirmation is required.
---
Domain and module applications：
Applicable fields and examples:
1. **Power management**:
**J657-VB** is widely used in **DC-DC converters** and power modules to efficiently control current and improve overall system efficiency. Its low on-resistance reduces energy loss and is very suitable for use in high-efficiency power management applications.
2. **Electric vehicles**:
In the power system of **electric vehicles**, J657-VB can be used for battery management, drive motor control and energy recovery systems to meet high voltage and high current requirements and ensure system safety and stability.
3. **Industrial automation**:
This MOSFET is very suitable for **industrial control systems**, such as motor drives and automation equipment. Its high current capability (-50A) and high withstand voltage characteristics (-100V) enable it to work reliably in harsh industrial environments.
4. **Consumer electronics**:
J657-VB can also be used for power management of various **consumer electronic products**, such as chargers and portable devices, which can effectively extend battery life and provide efficient power conversion.
In summary, **J657-VB** is a powerful P-channel MOSFET suitable for a variety of fields, especially showing excellent performance in high voltage and high power applications.
1. **Power management**:
**J657-VB** is widely used in **DC-DC converters** and power modules to efficiently control current and improve overall system efficiency. Its low on-resistance reduces energy loss and is very suitable for use in high-efficiency power management applications.
2. **Electric vehicles**:
In the power system of **electric vehicles**, J657-VB can be used for battery management, drive motor control and energy recovery systems to meet high voltage and high current requirements and ensure system safety and stability.
3. **Industrial automation**:
This MOSFET is very suitable for **industrial control systems**, such as motor drives and automation equipment. Its high current capability (-50A) and high withstand voltage characteristics (-100V) enable it to work reliably in harsh industrial environments.
4. **Consumer electronics**:
J657-VB can also be used for power management of various **consumer electronic products**, such as chargers and portable devices, which can effectively extend battery life and provide efficient power conversion.
In summary, **J657-VB** is a powerful P-channel MOSFET suitable for a variety of fields, especially showing excellent performance in high voltage and high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
