J655-VB Product details
Product introduction:
J655-VB is a high-efficiency single P-channel MOSFET packaged in TO220F, designed for high voltage and medium current applications. Its maximum drain-source voltage is -100V, and it can work reliably in high voltage environments. Using advanced Trench technology, J655-VB has low on-resistance and good switching performance, suitable for various power management and switch control circuits, and its maximum drain current is -23A, making it perform well in a variety of applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -23A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -23A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -23A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
1. **Package type**: TO220F
This package provides excellent heat dissipation and is suitable for use in high power and high current environments.
2. **Channel type**: Single P-channel
Designed for negative power switching, it can effectively control reverse current.
3. **Drain-source voltage (VDS)**: -100V
Suitable for high voltage power management and control applications.
4. **Gate drive voltage (VGS)**: ±20V
Provides flexible gate control options and is compatible with a variety of circuit designs.
5. **Threshold voltage (Vth)**: -2V
The lower threshold voltage enables the device to start at a lower gate voltage, enhancing design flexibility.
6. **On-resistance (RDS(ON))**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
Low on-resistance ensures high efficiency under load and reduces power consumption.
7. **Maximum drain current (ID)**: -23A
Able to withstand medium current load, suitable for a variety of power applications.
8. **Technology type**: Trench
Trench technology provides good switching speed and low switching losses, further improving overall efficiency.
Domain and module applications:
1. **Power Management System**
J655-VB is very effective in DC-DC converters, especially in applications where high voltage needs to be converted to low voltage. Its low on-resistance helps reduce energy loss and improve conversion efficiency.
2. **High Voltage Power Control**
In various high voltage power management systems, J655-VB can be used as a negative power switch to control the on and off of the power supply. Its high withstand voltage characteristics ensure the reliability of the system under extreme conditions.
3. **Industrial Automation**
J655-VB is widely used in industrial control and automation equipment, especially in motor drive and switching circuits that require high current and high voltage. The stability and response speed of the device enable the equipment to switch quickly, improving work efficiency.
4. **Consumer Electronics**
In consumer electronic devices that require high voltage power supply, J655-VB can be used for power management switches, such as battery management systems and power adapters, to ensure stability and high efficiency of the device under high load conditions.
With its high voltage and medium current capabilities, J655-VB is an ideal choice for a variety of high-efficiency power management and switching applications, suitable for industrial, consumer electronics and other fields, to meet the performance and reliability requirements of modern electronic devices.
Technical support:
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