J646-VB Product details
Product introduction:
J646-VB is a high-performance single P-channel MOSFET in TO252 package, designed for low voltage and high current applications. The device has a rated drain-source voltage (VDS) of -30V and supports a gate-source voltage (VGS) of ±20V. Its turn-on threshold voltage (Vth) is -1.7V, which enables it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of J646-VB is 46mΩ at VGS of 4.5V and 33mΩ at VGS of 10V, indicating that it can provide lower power consumption and high efficiency under load, and the maximum drain current (ID) can reach -38A. This MOSFET uses advanced Trench technology and has excellent thermal management characteristics, making it suitable for a variety of power management and switch control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Model**: J646-VB
- **Package**: TO252
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 46mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Drain current (ID)**: -38A
- **Technology type**: Trench technology
- **Maximum power dissipation (PD)**: 50W
- **Thermal resistance (RθJC)**: 3°C/W
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications:
1. **Power Management and Conversion**: The J646-VB is ideal for use in DC-DC converters and power adapters, providing high efficiency and low power consumption during power conversion. Its low on-resistance ensures good performance under high load conditions.
2. **Power Tools and Home Appliances**: Due to its high maximum drain current, the J646-VB is suitable for power management and control of high-power devices such as power tools and home appliances. This MOSFET can ensure the reliability and efficiency of the equipment during fast switching operations.
3. **LED Driver**: The J646-VB is also suitable for use in LED driver modules, especially in lighting applications that require high current and high efficiency. Its low on-resistance can effectively reduce energy consumption and provide stable current output.
4. **Battery Management System (BMS)**: This MOSFET is suitable for switching and control applications in battery management systems, which can efficiently manage the charging and discharging process of the battery. Its high current carrying capacity and low on-resistance ensure the safety and efficiency of the battery during charging and discharging.
Technical support:
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