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J643-VB Product details
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J643-VB MOSFET Product Introduction
J643-VB is a high-performance single P-channel MOSFET designed for low-voltage, high-current applications. It uses a TO252 package, which is suitable for space-constrained designs. The MOSFET has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) rating of ±20V. It uses advanced trench technology to ensure efficient and reliable operation. Its low threshold voltage (Vth) is -1.7V, and the on-resistance (RDS(ON)) is 46mΩ at VGS=4.5V and 33mΩ at VGS=10V, which can effectively reduce conduction losses. In addition, its maximum drain current (ID) can reach -38A, which is suitable for handling higher power loads.
J643-VB is a high-performance single P-channel MOSFET designed for low-voltage, high-current applications. It uses a TO252 package, which is suitable for space-constrained designs. The MOSFET has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) rating of ±20V. It uses advanced trench technology to ensure efficient and reliable operation. Its low threshold voltage (Vth) is -1.7V, and the on-resistance (RDS(ON)) is 46mΩ at VGS=4.5V and 33mΩ at VGS=10V, which can effectively reduce conduction losses. In addition, its maximum drain current (ID) can reach -38A, which is suitable for handling higher power loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V
- **RDS(ON) (on-resistance)**:
- 46mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **ID (drain current)**: -38A
- **Technology**: Trench technology
- **Power dissipation (Pd)**: Suitable for high power dissipation applications with good thermal management
- **Operating temperature range**: -55°C to 150°C (Tj max)
- **Gate charge (Qg)**: Low gate charge ensures efficient switching performance.
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V
- **RDS(ON) (on-resistance)**:
- 46mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **ID (drain current)**: -38A
- **Technology**: Trench technology
- **Power dissipation (Pd)**: Suitable for high power dissipation applications with good thermal management
- **Operating temperature range**: -55°C to 150°C (Tj max)
- **Gate charge (Qg)**: Low gate charge ensures efficient switching performance.
Domain and module applications：
Applications and modules
The J643-VB MOSFET is widely used in a variety of fields, including:
1. **Power management**: Due to its low on-resistance and high current handling capability, the J643-VB MOSFET is well suited for use in DC-DC converters and power modules. This makes it an excellent choice for use in computer power supplies, communications equipment, and industrial power management systems, where it can effectively improve energy efficiency and reduce heat generation.
2. **Battery management systems**: The J643-VB is suitable for battery management applications, especially in electric vehicles and renewable energy storage systems. Its P-channel configuration simplifies the design of the high-side switch, which can effectively manage the battery charging and discharging process, ensuring safety and efficiency.
3. **Motor drive**: This MOSFET is also suitable for motor control applications, such as in motor drives for power tools, home appliances, and electric vehicles. With its high leakage current capability of -38A, J643-VB can meet the driving needs of high-power motors, especially in environments with high power density and efficiency requirements.
4. **Load Switch**: J643-VB MOSFET can be used in load switching applications, which can efficiently control the flow of current and is suitable for switching control of various high-power loads. This makes it have good application prospects in consumer electronics, industrial equipment and automotive electronics.
The excellent performance and wide applicability of J643-VB MOSFET make it an ideal solution for high-power switching tasks.
The J643-VB MOSFET is widely used in a variety of fields, including:
1. **Power management**: Due to its low on-resistance and high current handling capability, the J643-VB MOSFET is well suited for use in DC-DC converters and power modules. This makes it an excellent choice for use in computer power supplies, communications equipment, and industrial power management systems, where it can effectively improve energy efficiency and reduce heat generation.
2. **Battery management systems**: The J643-VB is suitable for battery management applications, especially in electric vehicles and renewable energy storage systems. Its P-channel configuration simplifies the design of the high-side switch, which can effectively manage the battery charging and discharging process, ensuring safety and efficiency.
3. **Motor drive**: This MOSFET is also suitable for motor control applications, such as in motor drives for power tools, home appliances, and electric vehicles. With its high leakage current capability of -38A, J643-VB can meet the driving needs of high-power motors, especially in environments with high power density and efficiency requirements.
4. **Load Switch**: J643-VB MOSFET can be used in load switching applications, which can efficiently control the flow of current and is suitable for switching control of various high-power loads. This makes it have good application prospects in consumer electronics, industrial equipment and automotive electronics.
The excellent performance and wide applicability of J643-VB MOSFET make it an ideal solution for high-power switching tasks.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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