J635-VB Product details
Product introduction:
J635-VB is a high-performance P-channel MOSFET in TO252 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) is -60V and the maximum drain current (ID) can reach -35A, which is suitable for high-efficiency power management and power conversion systems. The device has a threshold voltage (Vth) of -1.7V and has good switching characteristics, and can operate stably at lower gate-source voltages. With its superior on-resistance of 58mΩ (@VGS=4.5V) and 46mΩ (@VGS=10V), the J635-VB provides excellent performance and is suitable for a variety of power electronics applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Model**: J635-VB
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 58mΩ (@VGS=4.5V)
- 46mΩ (@VGS=10V)
- **Maximum drain current (ID)**: -35A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Power consumption**: Varies according to specific application and circuit design
- **Switching speed**: With fast switching capability, suitable for high-frequency applications
- **Voltage resistance**: High voltage resistance, suitable for high-voltage circuit design
Domain and module applications:
1. **Power management and power conversion modules**
J635-VB performs well in power management systems and is often used in DC-DC converters and AC-DC power modules. Its low on-resistance helps improve energy efficiency and reduce energy loss. It is widely used in uninterruptible power supplies (UPS) and computer power supplies to achieve efficient energy conversion and management.
2. **Motor drive and control**
In the field of motor control, J635-VB is suitable for efficient motor drive applications, such as drive circuits in electric vehicles and industrial automation equipment. Its load capacity and fast switching characteristics enable it to effectively control the start, stop and speed regulation of the motor, thereby improving the overall performance of the system.
3. **Load switch and protection circuit**
The device can be used as a switch for high current loads and is often used in battery management systems (BMS) and intelligent power distribution systems to ensure safe operation. By monitoring the current load, the J635-VB can effectively protect the device from overload or short circuit, thereby extending the service life of the device.
4. **Renewable Energy Systems**
The J635-VB is also suitable for renewable energy applications, such as power management modules for solar inverters and wind power generation systems. In these systems, it can handle rapidly changing currents, ensure effective energy conversion and storage, and meet the needs of modern energy systems for efficiency and reliability.
In summary, the J635-VB is an efficient and reliable MOSFET suitable for a variety of high-power and high-efficiency power electronics applications, and can meet the stringent requirements of modern power systems.
Technical support:
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